Datasheet > 2N4093UBE3

2N4093UBE3

更新时间： 2024-11-20 03:58:11

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
2页	49K
描述
Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, SURFACE MOUNT PACKAGE-3

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2N4093UBE3 数据手册

TECHNICAL DATA

N-CHANNEL J-FET

Qualified per MIL-PRF-19500/ 431

Devices

Qualified Level

2N4091

2N4092

2N4093

JANTX

2N4091UB

2N4092UB

2N4093UB

JANTXV

ABSOLUTE MAXIMUM RATINGS (T_A= +25⁰C unless otherwise noted)

Parameters / Test Conditions

Gate-Source Voltage

Drain-Source Voltage

Drain-Gate Voltage

Symbol

V_GS

V_DS

V_DG

I_G

P_T

T_j

T_stg

Value

-40

Units

0.36

mAdc

⁰C

TO-18*

(TO-206AA)

Gate Current

Power Dissipation

(1)

T_A= +25⁰C

Operating Junction

Operating Storage Temperature Range

-65 to +175

-65 to +200

Surface Mount

(UB version)

(1) Derate linearly 2.4 mW/⁰C for T_A> 25⁰C.

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T_C= +25⁰C unless otherwise noted)

PARAMETERS / TEST CONDITIONS

Gate-Source Breakdown Voltage

V_DS= 0, I_G= -1.0 mAdc

Gate Reverse Current

V_DS= 0, V_GS= -20 Vdc

Drain Current

V_GS= -12, V_DS= 20 Vdc

V_GS= -8.0, V_DS= 20 Vdc

V_GS= -6.0, V_DS= 20 Vdc

Drain Current

Symbol

V_(BR)GSS

I_GSS

Min.

Max.

Units

Vdc

-40

-0.1

0.1

2N4091

2N4092

2N4093

I_D(off)

V_GS= 0, V_DS= 20 Vdc

2N4091

2N4092

2N4093

I_DSS

8.0

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

022802

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