是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | BCY |
包装说明: | CYLINDRICAL, O-MBCY-W3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.24 | 最大集电极电流 (IC): | 0.05 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
JEDEC-95代码: | TO-206AA | JESD-30 代码: | O-MBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 540 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N4108 | NJSEMI |
获取价格 |
SCR, V(DRM) = 50V TO 99.9V | |
2N411 | DIGITRON |
获取价格 |
TRANSISTOR,BJT,PNP,15MA I(C),TO-40 | |
2N4110 | SSDI |
获取价格 |
Silicon Controlled Rectifier, 0.18A I(T)RMS, 180mA I(T), 200V V(DRM), 200V V(RRM), 1 Eleme | |
2N4111 | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | |
2N4111 | NJSEMI |
获取价格 |
Trans GP BJT NPN 60V 5A 3-Pin(2+Tab) TO-3 | |
2N4111E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL C | |
2N4112 | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. | |
2N4112 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL C | |
2N4112 | NJSEMI |
获取价格 |
Trans GP BJT NPN 60V 5A 3-Pin(2+Tab) TO-3 | |
2N4112E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL C |