Datasheet > 2N4116

2N4116

更新时间： 2024-11-18 23:19:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
2页	70K
描述
TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 5A I(C) \| STR-10

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N4116 数据手册

SEMICONDUCTOR

2N5400

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

HIGH VOLTAGE APPLICATION.

FEATURES

ᴌHigh Collector Breakdwon Voltage

: V_CBO=-130V, V_CEO=-120V

ᴌLow Leakage Current.

DIM MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

: I_CBO=-100nA(Max.) @V_CB=-100V

ᴌLow Saturation Voltage

1.00

1.27

0.85

: V_CE(sat)=-0.5V(Max.) @I_C=-50mA, I_B=-5mA

ᴌLow Noise : NF=8dB (Max.)

0.45

14.00 +0.50

0.55 MAX

2.30

0.45 MAX

1.00

1. EMITTER

2. BASE

MAXIMUM RATING (Ta=25ᴱ)

3. COLLECTOR

CHARACTERISTIC

Collector-Base Voltage

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

-130

-120

-5

UNIT

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

TO-92

-600

-100

I_B

Base Current

Collector Power Dissipation

(Ta=25ᴱ)

P_C

625

1.5

Collector Power Dissipation

(Tc=25ᴱ)

T_j

Junction Temperature

150

ᴱ

T_stg

Storage Temperature Range

-55ᴕ150

1997. 5. 13

Revision No : 0

1/2

中文翻译

下载PDF

与2N4116相关器件

型号	品牌	获取价格	描述	数据表
2N4116E3	MICROSEMI	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3
2N4117	NJSEMI	获取价格	N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS
2N4117	MICROSS	获取价格	an Ultra-High Input Impedance N-Channel JFET
2N4117	CALOGIC	获取价格	N-Channel JFET General Purpose Amplifier
2N4117	INTERSIL	获取价格	N-CHANNEL JFET
2N4117	RHOPOINT	获取价格	N-Channel Silicon Junction Field-Effect Transistor
2N4117_15	CALOGIC	获取价格	N-Channel JFET General Purpose Amplifier
2N4117_TO-71	MICROSS	获取价格	an Ultra-High Input Impedance N-Channel JFET
2N4117-19-A	CALOGIC	获取价格	N-Channel JFET General Purpose Amplifier
2N4117A	RHOPOINT	获取价格	N-Channel Silicon Junction Field-Effect Transistor