Datasheet > 2N4117A-SOT-23-3L

2N4117A-SOT-23-3L

更新时间： 2024-11-23 19:54:03

品牌	Logo	应用领域
凌特 - Linear		/
页数	文件大小	规格书
1页	141K
描述
Transistor,

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2N4117A-SOT-23-3L 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

2N4117A-SOT-23-3L 数据手册

2N and SST 4117,

4118, 4119

ULTRA-HIGH INPUT IMPEDANCE

N-CHANNEL JFET

FEATURES

LOW POWER

I_DSS<600 µA (2N4117)

MINIMUM CIRCUIT LOADING I_GSS<1 pA (2N4117 A Series)

ABSOLUTE MAXIMUM RATINGS (NOTE 1)

@ 25°C (unless otherwise noted)

Gate-Source or Gate-Drain Voltage (NOTE 1)

Gate-Current

-40V

50mA

Total Device Dissipation

(Derate 2mW/ºC above 25ºC)

Storage Temperature Range

Lead Temperature

300mW

-55ºC to+150ºC

SOT-23

Top View

TO-72

Top View

(1/16” from case for 10 seconds)

300ºC

ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise noted)

2N&SST 4117A

2N4117/A

2N4118

2N4119

2N&SST 4118A 2N&SST 4119A

SYMBOL

CHARACTERISTIC

MIN

MAX

-10

-25

-1

MIN

MAX

-10

-25

-1

MIN

MAX UNITS

CONDITIONS

-10

-25

-1

Gate Reverse Current Standard

only

I_GSS

V_GS=-10V V_DS=0

150ºC

Gate Reverse Current

2N Series only

I_GSS

V_GS=-20V V_DS=0

I_G=-1µA V_DS=0

-2.5

150ºC

Gate-Source Breakdown

Voltage

BV_GSS

V_GS(off)

I_DSS

-40

Gate-Source Cutoff Voltage

Saturation Drain Current

-0.6

0.03

-1.8

-1

-3

-2

-6

V_DS=10V I_D=1nA

V_DS=10V V_GS=0

0.60

0.08

0.60

0.20

0.80

(NOTE 2)

FN4117/A 0.015

Common-Source Forward

Transconductance (NOTE 2)

g_fs

450

650

100

700

µS

f=1kHz

Common-Source Output

Conductance

g_os

V_DS=10V V_GS=0

Common-Source Input

Capacitance

C_iss

C_rss

f=1MHz

Common-Source Reverse

Transfer Capacitance

1.5

NOTES:

1. Due to symmetrical geometry, these units may be operated with source and drain leads interchanged.

2. This parameter is measured during a 2 ms interval 100 ms after power is applied. (Not a JEDEC condition.)

Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing

high-quality discrete components. Expertise brought to LIS is based on processes and products developed

at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,

a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,

co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.

Linear Integrated Systems

• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

5/02/2012 Rev#A4 ECN# 2N & SST 4117 4118 4119

中文翻译

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与2N4117A-SOT-23-3L相关器件

型号	品牌	获取价格	描述	数据表
2N4118	CALOGIC	获取价格	N-Channel JFET General Purpose Amplifier
2N4118	Linear Systems	获取价格	ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET
2N4118	NJSEMI	获取价格	N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS
2N4118	MICROSS	获取价格	an Ultra-High Input Impedance N-Channel JFET
2N4118	INTERSIL	获取价格	N-CHANNEL JFET
2N4118	RHOPOINT	获取价格	N-Channel Silicon Junction Field-Effect Transistor
2N4118_TO-71	MICROSS	获取价格	an Ultra-High Input Impedance N-Channel JFET
2N4118A	RHOPOINT	获取价格	N-Channel Silicon Junction Field-Effect Transistor
2N4118A	CALOGIC	获取价格	N-Channel JFET General Purpose Amplifier
2N4118A	Linear Systems	获取价格	ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET

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