2N4118A

更新时间： 2024-11-19 12:56:39

品牌	Logo	应用领域
MICROSS		晶体小信号场效应晶体管放大器
页数	文件大小	规格书
1页	290K
描述
an Ultra-High Input Impedance N-Channel JFET

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2N4118A 数据手册

2N4118A

N-CHANNEL JFET

Linear Systems replaces discontinued Siliconix 2N4118A

The 2N4118A is an Ultra-High Input Impedance N-Channel JFET

FEATURES

The 2N4118A provides ultra-high input impedance. The

device is specified with a 1-pA limit and typically

operates at 0.2 pA. The part is ideal for use as a high-

impedance sensitive front-end amplifier.

DIRECT REPLACEMENT FOR SILICONIX 2N4118A

LOW POWER

MINIMUM CIRCUIT LOADING

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted)

I_DSS<90 µA

I_GSS<1 pA

2N4118A Benefits:

Insignificant Signal Loss / Error Voltage

with High-Impedance Source

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

MAXIMUM CURRENT

Gate Current (Note 1)

MAXIMUM VOLTAGES

Gate to Drain or Gate to Source (Note 2)

Low Power Consumption (Battery)

Maximum Signal Output, Low Noise

High Sensitivity to Low-Level Signals

‐65°C to +175°C

‐55°C to +150°C

2N4118A Applications:

300mW

50mA

‐40V

High-Impedance Transducer

Smoke Detector Input

Infrared Detector Amplifier

Precision Test Equipment

2N4118A ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_GSS

V_GS(off)

I_DSS

CHARACTERISTIC

MIN

‐40

‐1

0.08

‐‐

TYP.

‐‐

MAX

‐‐

‐3

0.24

‐1

‐2.5

250

UNITS

CONDITIONS

Gate to Source Breakdown Voltage

Gate to Source Cutoff Voltage

Gate to Source Saturation Current

Gate Leakage Current

I_G= ‐1µA, V_DS= 0V

V_DS= 10V, I_D= 1nA

V_DS= 10V, V_GS= 0V

V_GS= ‐20V, V_DS= 0V

I_GSS

Click To Buy

V_GS= ‐20V, V_DS= 0V, 150°C

V_DS= 10V, V_GS= 0V, f = 1kHz

g_fs

g_os

C_iss

C_rss

Forward Transconductance(Note 3)

Output Conductance

µmho

Input Capacitance

‐‐

1.5

V_DS= 10V, V_GS= 0V, f = 1MHz

Reverse Transfer Capacitance

1 . Absolute maximum ratings are limiting values above which 2N4118A serviceability may be impaired.

2. Due to symmetrical geometry, these units may be operated with source and drain leads interchanged

3. This parameter is measured during a 2ms interval 100ms after power is applied. (Not a JEDEC condition.)

NOTES

Micross Components Europe

Available Packages:

TO-71 (Bottom View)

2N4118A in TO-71

2N4118A in bare die.

Please contact Micross for full

package and die dimensions

Tel: +44 1603 788967

Email: chipcomponents@micross.com

Web: http://www.micross.com/distribution

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed

for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise

under any patent or patent rights of Linear Integrated Systems.

Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx

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与2N4118A相关器件

型号	品牌	获取价格	描述	数据表
2N4118A_TO-71	MICROSS	获取价格	an Ultra-High Input Impedance N-Channel JFET
2N4118A-E3	VISHAY	获取价格	TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-206AF, HERMETIC SEALED, TO-72, 4 PIN, FET
2N4119	CALOGIC	获取价格	N-Channel JFET General Purpose Amplifier
2N4119	Linear Systems	获取价格	ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET
2N4119	NJSEMI	获取价格	N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS
2N4119	MICROSS	获取价格	an Ultra-High Input Impedance N-Channel JFET
2N4119	INTERFET	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-72
2N4119	INTERSIL	获取价格	N-CHANNEL JFET
2N4119	RHOPOINT	获取价格	N-Channel Silicon Junction Field-Effect Transistor
2N4119_TO-71	MICROSS	获取价格	an Ultra-High Input Impedance N-Channel JFET

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