Datasheet > 2N4117A

2N4117A

更新时间： 2024-11-19 06:22:11

品牌	Logo	应用领域
RHOPOINT		晶体晶体管场效应晶体管
页数	文件大小	规格书
17页	358K
描述
N-Channel Silicon Junction Field-Effect Transistor

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数据手册

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2N4117A 数据手册

01/99

B-9

2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A

N-Channel Silicon Junction Field-Effect Transistor

Absolute maximum ratings at T = 25¡C

¥ Audio Amplifiers

¥ Ultra-High Input Impedance

Amplifiers

Reverse Gate Source & Reverse Gate Drain Voltage

Continuous Forward Gate Current

– 40 V

50 mA

300 mW

2 mW/°C

Continuous Device Power Dissipation

Power Derating (to 175°C)

2N4117

2N4117A

2N4118

2N4118A

2N4119

2N4119A

Process NJ01

Test Conditions

At 25°C free air temperature:

Static Electrical Characteristics

Min Max Min Max Min Max Unit

Gate Source Breakdown Voltage

– 40

I = – 1µA, V = ØV

G DS

(BR)GSS

Gate Reverse Current

2N4117, 2N4118, 2N4119

2N4117A, 2N4118A, 2N4119A

– 10

– 1

– 10

– 1

– 10

– 1

= – 20V, V = ØV

GSS

GS DS

= – 20V, V = ØV

Gate Source Cutoff Voltage

– 0.6 – 1.8 – 1

– 3

– 2

– 6

= 10V, I = 1 nA

GS(OFF)

DS D

Drain Saturation Current (Pulsed)

2N4117, 2N4118, 2N4119

2N4117A, 2N4118A, 2N4119A

0.03 0.09 0.08 0.24

0.015 0.09 0.08 0.24

0.2

0.6

= 10V, V = ØV

GSS

DS GS

= 10V, V = ØV

Dynamic Electrical Characteristics

Common Source Forward

Transconductance

210

250

100

330

µS

= 10V, V = ØV

f = 1 kHz

DS GS

Common Source Output Conductance

Common Source Input Capacitance

µS

= 10V, V = ØV

f = 1 kHz

f = 1 MHz

DS GS

= 10V, V = ØV

iss

DS GS

Common Source Reverse

Transfer Capacitance

1.5

= 10V, V = ØV

f = 1 MHz

rss

DS GS

TOÐ72 Package

Dimensions in Inches (mm)

Pin Configuration

1 Source, 2 Drain, 3 Gate, 4 Case

1000 N. Shiloh Road, Garland, TX 75042

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