Datasheet > 2N4117-19-A

2N4117-19-A

更新时间： 2024-11-24 01:15:39

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CALOGIC		/
页数	文件大小	规格书
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描述
N-Channel JFET General Purpose Amplifier

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2N4117-19-A 数据手册

N-Channel JFET

General Purpose Amplifier

LLC

2N4117 – 2N4119 / 2N4117A – 2N4119A

PN4117 – PN4119 / PN4117A – PN4119A / SST4117 – SST4119

FEATURES

PIN CONFIGURATION

Low Leakage

•

Low Capacitance

•

ABSOLUTE MAXIMUM RATINGS

(T_A= 25^oC unless otherwise noted)

TO-92

TO-72

Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V

Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Storage Temperature Range . . . . . . . . . . . . . -65^oC to +200^oC

Operating Temperature Range . . . . . . . . . . . -55^oC to +175^oC

Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300^oC

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW

Derate above 25^oC . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/^oC

SOT-23

NOTE: Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These are

stress ratings only and functional operation of the device at these or

any other conditions above those indicated in the operational sections

of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

5007

ORDERING INFORMATION

PRODUCT MARKING (SOT-23)

Part

Package

Temperature Range

SST4117

SST4118

SST4119

T17

T18

T19

2N4117-19/A Hermetic TO-72

PN4117-19/A Plastic TO-92

SST4117-19 Plastic SOT-23

-55^oC to +175^oC

-55^oC to +135^oC

X2N4117-19/A Sorted Chips in Carriers -55^oC to +175^oC

ELECTRICAL CHARACTERISTICS (T_A= 25^oC unless otherwise specified)

4117/A

4118/A

4119/A

SYMBOL

PARAMETER

UNITS

TEST CONDITIONS

MIN MAX MIN MAX MIN MAX

-40 -40 -40

BV_GSS

Gate-Source Breakdown Voltage

Gate Reverse Current

I_G= -1µA, V_DS= 0

-10

-1

-10

-1

-10

-1

A devices

V_GS= -20V, V_DS= 0

T_A= +150^oC

I_GSS

-25

-2.5

-25

-2.5

-3

-25

-2.5

-6

V_GS(off)

I_DSS

g_fs

Gate-Source Pinch-Off Voltage

-0.6 -1.8

-1

-2

V_DS= 10V, I_D= 1nA

V_DS= 10V, V_GS= 0

0.02 0.09 0.08 0.24 0.20 0.60 mA

70 210 80 250 100 330

Drain Current at Zero Gate Voltage (Note 1)

Common-Source Forward Transconductance (Note 1)

Common-Source Forward Transconductance (Note 2)

Common-Source Output Conductance

V_DS= 10V, f = 1kHz

V_GS= 0, f = 30MHz

V_DS= 10V, V_GS= 0, f = 1kHz

µS

g_fs

g_os

_DS= 10V, V_GS= 0,

f = 1MHz

C_iss

C_rss

Common-Source Input Capacitance (Note 2)

_DS= 10V, V_GS= 0,

f = 1MHz

1.5

Common-Source Reverse Transfer Capacitance (Note 2)

NOTES: 1. Pulse test: Pulse duration of 2ms used during test.

2. For design reference only, not 100% tested.

CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539 510-656-2900 PHONE, 510-651-1076 FAX

DS0003 REV A

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与2N4117-19-A相关器件

型号	品牌	获取价格	描述	数据表
2N4117A	RHOPOINT	获取价格	N-Channel Silicon Junction Field-Effect Transistor
2N4117A	CALOGIC	获取价格	N-Channel JFET General Purpose Amplifier
2N4117A	Linear Systems	获取价格	ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET
2N4117A	VISHAY	获取价格	N-Channel JFETs
2N4117A	MICROSS	获取价格	an Ultra-High Input Impedance N-Channel JFET
2N4117A	NJSEMI	获取价格	N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS
2N4117A_TO-71	MICROSS	获取价格	an Ultra-High Input Impedance N-Channel JFET
2N4117A-2-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206A
2N4117A-SOT-23-3L	Linear	获取价格	Transistor,
2N4118	CALOGIC	获取价格	N-Channel JFET General Purpose Amplifier

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