Datasheet > 2N3996_1

2N3996_1

更新时间： 2024-09-15 07:28:35

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体开关晶体管电源开关
页数	文件大小	规格书
4页	177K
描述
NPN POWER SWITCHING SILICON TRANSISTOR

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中文翻译

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数据手册

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2N3996_1 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

NPN POWER SWITCHING SILICON TRANSISTOR

Qualified per MIL-PRF-19500/374

DEVICES

LEVELS

JAN

2N3996

2N3997

2N3998

2N3999

JANTX

JANTXV

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Collector-Emitter Voltage

Symbol

V_CEO

V_CBO

V_EBO

I_B

Value

Unit

Vdc

Adc

100

8.0

Collector-Base Voltage

Emitter-Base Voltage

Base Current

0.5

10 ⁽¹⁾

Collector Current

I_C

@ T_A= +25°C ⁽²⁾

@ T_C= +100°C ⁽³⁾

2.0

Total Power Dissipation

P_T

Operating & Storage Junction Temperature Range

Thermal Resistance, Junction-to-Case

T_J, T_stg

R_θJC

-65 to +200

3.33

°C

TO-111

2N3996, 2N3997

°C/W

Note:

(1) This value applies for Tp ≤ 1.0ms, duty cycle ≤ 50%

(2) Derate linearly 11.4 mW/°C for T_A> +25°C

(3) Derate linearly 300 mW/°C for T_C> +100°C

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Symbol

Min.

Max.

Unit

Collector-Emitter Breakdown Voltage

I_C= 50mAdc

V_(BR)CEO

Vdc

Collector-Emitter Breakdown Voltage

I_C= 10µAdc

V_(BR)CBO

I_CEO

100

Collector-Emitter Cutoff Current

µAdc

ηAdc

_CE= 60Vdc

Collector-Emitter Cutoff Current

_CE= 80Vdc, V_BE= 0V

TO-59

2N3998, 2N3999

I_CES

200

Emitter-Base Cutoff Current

V_EB= 5.0Vdc

I_EBO

200

ηAdc

µAdc

_EB= 8.0Vdc

T4-LDS-0165 Rev. 1 (100688)

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