是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-276AB |
包装说明: | CHIP CARRIER, R-CBCC-N3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.18 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
JEDEC-95代码: | TO-276AB | JESD-30 代码: | R-CBCC-N3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 40 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N3996SMD05 | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed | |
2N3997 | SEMICOA |
获取价格 |
Silicon NPN Transistor | |
2N3997 | SSDI |
获取价格 |
5 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS | |
2N3997 | MICROSEMI |
获取价格 |
NPN POWER SWITCHING SILICON TRANSISTOR | |
2N3997 | NJSEMI |
获取价格 |
Trans GP BJT NPN 80V 5A 4-Pin TO-111 | |
2N3997SMD | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed | |
2N3997SMD05 | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed | |
2N3998 | NJSEMI |
获取价格 |
N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTOR | |
2N3998 | SEMICOA |
获取价格 |
Chip Type 2C5154 Geometry 9201 Polarity NPN | |
2N3998 | MICROSEMI |
获取价格 |
NPN POWER SWITCHING SILICON TRANSISTOR |