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2N3904_D28Z PDF预览

2N3904_D28Z

更新时间: 2024-11-07 14:39:19
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER /
页数 文件大小 规格书
17页 656K
描述
Small Signal Bipolar Transistor

2N3904_D28Z 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.57
Is Samacsys:NBase Number Matches:1

2N3904_D28Z 数据手册

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2N3904  
MMBT3904  
PZT3904  
C
C
E
E
C
TO-92  
C
B
B
SOT-23  
Mark: 1A  
B
E
SOT-223  
NPN General Purpose Amplifier  
This device is designed as a general purpose amplifier and switch.  
The useful dynamic range extends to 100 mA as a switch and to  
100 MHz as an amplifier.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
40  
60  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
6.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
200  
mA  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N3904  
*MMBT3904  
**PZT3904  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
350  
2.8  
1,000  
8.0  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
200  
357  
125  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.  
2001 Fairchild Semiconductor Corporation  
2N3904/MMBT3904/PZT3904, Rev A  

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