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2N3904-BP-HF

更新时间： 2024-01-26 11:18:01

品牌	Logo	应用领域
美微科 - MCC		放大器
页数	文件大小	规格书
4页	98K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3

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技术参数
数据手册

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2N3904-BP-HF 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2N3904-BP-HF 数据手册

M C C

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21201 Itasca Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

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2N3904

Features

Through Hole Package

Capable of 600mWatts of Power Dissipation

NPN General

Purpose Amplifier

Pin Configuration

Bottom View

TO-92

Electrical Characteristics @ 25°C Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_BL

Collector-Emitter Breakdown Voltage*

(I_C=1.0mAdc, I_B=0)

Vdc

Collector-Base Breakdown Voltage

(I_C=10mAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I_E=10mAdc, I_C=0)

6.0

Vdc

Base Cutoff Current

nAdc

(V_CE=30Vdc, V_BE=3.0Vdc)

Collector Cutoff Current

(V_CE=30Vdc, V_BE=3.0Vdc)

I_CEX

ON CHARACTERISTICS

h_FE

DC Current Gain*

(I_C=0.1mAdc, V_CE=1.0Vdc)

(I_C=1.0mAdc, V_CE=1.0Vdc)

(I_C=10mAdc, V_CE=1.0Vdc)

(I_C=50mAdc, V_CE=1.0Vdc)

(I_C=100mAdc, V_CE=1.0Vdc)

Collector-Emitter Saturation Voltage

(I_C=10mAdc, I_B=1.0mAdc)

(I_C=50mAdc, I_B=5.0mAdc)

Base-Emitter Saturation Voltage

(I_C=10mAdc, I_B=1.0mAdc)

(I_C=50mAdc, I_B=5.0mAdc)

100

300

V_CE(sat)

0.2

0.3

Vdc

V_BE(sat)

0.65

300

0.85

0.95

SMALL-SIGNAL CHARACTERISTICS

f_T

Current Gain-Bandwidth Product

(I_C=10mAdc, V_CE=20Vdc, f=100MHz)

Output Capacitance

(V_CB=5.0Vdec, I_E=0, f=1.0MHz)

Input Capacitance

(V_BE=0.5Vdc, I_C=0, f=1.0MHz)

Noise Figure

(I_C=100mAdc, V_CE=5.0Vdc, R_S=1.0kW

f=10Hz to 15.7kHz)

MHz

C_obo

C_ibo

4.0

8.0

5.0

DIMENSIONS

INCHES

MIN

.175

.500

.016

.135

.095

DIM

MAX

MIN

4.45

4.46

12.7

0.41

3.43

2.42

MAX

4.70

---

NOTE

.185

---

.020

.145

.105

SWITCHING CHARACTERISTICS

0.63

3.68

2.67

t_d

t_r

t_s

t_f

Delay Time

Rise Time

Storage Time

Fall Time

(V_CC=3.0Vdc, V_BE=0.5Vdc

I_C=10mAdc, I_B1=1.0mAdc)

(V_CC=3.0Vdc, I_C=10mAdc

I_B1=I_B2=1.0mAdc)

200

*Pulse Width £ 300ms, Duty Cycle£ 2.0%

www.mccsemi.com

12 3 4

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