2N3904H

更新时间： 2024-11-27 07:28:31

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
8页	174K
描述
General Purpose Transistors

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中文翻译

获取价格

技术参数
数据手册

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2N3904H 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	1 week	风险等级：	5.79
JESD-609代码：	e1	端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)
Base Number Matches：	1

2N3904H 数据手册

2N3903, 2N3904

General Purpose

Transistors

NPN Silicon

Features

http://onsemi.com

• Pb−Free Packages are Available*

COLLECTOR

MAXIMUM RATINGS

BASE

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

Unit

Vdc

CEO

CBO

EBO

Vdc

EMITTER

6.0

Vdc

Collector Current − Continuous

Total Device Dissipation

200

mAdc

@ T = 25°C

625

5.0

mW/°C

Derate above 25°C

TO−92

CASE 29

STYLE 1

Total Device Dissipation

@ T = 25°C

1.5

mW/°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

°C

stg

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

THERMAL CHARACTERISTICS (Note 1)

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

83.3

MARKING DIAGRAMS

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates Data in addition to JEDEC Requirements.

390x

YWWG

= 3 or 4

= Year

WW = Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

January, 2010 − Rev. 7

2N3903/D

12 3 4 5 6 7 8

中文翻译

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