是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.11 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 30 A |
集电极-发射极最大电压: | 40 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 5 | JEDEC-95代码: | TO-3 |
JESD-30 代码: | O-MBFM-P2 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 200 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
功耗环境最大值: | 150 W | 最大功率耗散 (Abs): | 150 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin (Sn) |
端子形式: | PIN/PEG | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 0.2 MHz |
VCEsat-Max: | 4 V | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
2N3442G | ONSEMI |
功能相似 |
High−Power Industrial Transistors | |
2N3055AG | ONSEMI |
功能相似 |
Complementary Silicon High-Power Transistors | |
2N3055G | ONSEMI |
功能相似 |
Complementary Silicon Power Transistors |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N3771/D | ETC |
获取价格 |
High Power NPN Silicon Power Transistors | |
2N3771_00 | STMICROELECTRONICS |
获取价格 |
HIGH POWER NPN SILICON TRANSISTOR | |
2N3771_06 | STMICROELECTRONICS |
获取价格 |
High Power NPN Silicon Power Transistors | |
2N3771G | ONSEMI |
获取价格 |
High Power NPN Silicon Power Transistors | |
2N3771G | NJSEMI |
获取价格 |
Trans GP BJT NPN 40V 30A 3-Pin(2+Tab) TO-204 Tray | |
2N3772 | STMICROELECTRONICS |
获取价格 |
HIGH POWER NPN SILICON TRANSISTOR | |
2N3772 | ONSEMI |
获取价格 |
POWER TRANSISTORS (NPN SILICON) | |
2N3772 | MOSPEC |
获取价格 |
POWER TRANSISTORS(150W) | |
2N3772 | BOCA |
获取价格 |
HIGH POWER NPN SILICON POWER TRANSISTORS | |
2N3772 | MICROSEMI |
获取价格 |
NPN HIGH POWER SILICON TRANSISTOR |