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2N3715 PDF预览

2N3715

更新时间: 2024-01-19 05:16:46
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管局域网高功率电源
页数 文件大小 规格书
2页 58K
描述
NPN HIGH POWER SILICON TRANSISTOR

2N3715 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:HERMETIC SEALED, METAL, TO-3, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.69
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):10 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):50
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

2N3715 数据手册

 浏览型号2N3715的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN HIGH POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 408  
Devices  
Qualified Level  
JAN  
2N3715  
2N3716  
JANTX  
JANTXV  
MAXIMUM RATINGS  
Symbol 2N3715  
Units  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Ratings  
2N3716  
80  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
60  
VCEO  
VCBO  
VEBO  
IB  
80  
100  
7.0  
4.0  
10  
Collector Current  
IC  
Total Power Dissipation  
@ TA = 250C  
@ TC =1000C  
5.0  
85.7  
W
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Thermal Resistance, Junction-to-Case  
Symbol  
Max.  
1.17  
Unit  
TO-3* (TO-204AA)  
0C/W  
R
qJC  
1) Derate linearly 28.57 mW/0C for TA >250C  
2) Derate linearly 0.857 W/0C for TC >1000C  
*See Appendix A for  
Package Outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Current  
IC = 10 mAdc  
Symbol  
Min.  
Max.  
Unit  
Vdc  
60  
80  
2N3715  
2N3716  
V(BR)  
CEO  
Collector-Base Cutoff Current  
VCB = 80 Vdc  
VCB = 100 Vdc  
10  
10  
mAdc  
2N3715  
2N3716  
ICBO  
Emitter-Base Breakdown Voltage  
VEB = 7.0 Vdc  
1.0  
mAdc  
mAdc  
IEBO  
ICEX  
Collector-Emitter Cutoff Current  
VBE = 1.5 Vdc, VCE = 60 Vdc  
VBE = 1.5 Vdc, VCE = 80 Vdc  
1.0  
1.0  
2N3715  
2N3716  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

2N3715 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV2N3715 MICROSEMI

完全替代

NPN HIGH POWER SILICON TRANSISTOR
JANTX2N3715 MICROSEMI

完全替代

NPN HIGH POWER SILICON TRANSISTOR

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