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2N3716 PDF预览

2N3716

更新时间: 2024-11-25 22:49:23
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管高功率电源
页数 文件大小 规格书
2页 58K
描述
NPN HIGH POWER SILICON TRANSISTOR

2N3716 数据手册

 浏览型号2N3716的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN HIGH POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 408  
Devices  
Qualified Level  
JAN  
2N3715  
2N3716  
JANTX  
JANTXV  
MAXIMUM RATINGS  
Symbol 2N3715  
Units  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Ratings  
2N3716  
80  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
60  
VCEO  
VCBO  
VEBO  
IB  
80  
100  
7.0  
4.0  
10  
Collector Current  
IC  
Total Power Dissipation  
@ TA = 250C  
@ TC =1000C  
5.0  
85.7  
W
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Thermal Resistance, Junction-to-Case  
Symbol  
Max.  
1.17  
Unit  
TO-3* (TO-204AA)  
0C/W  
R
qJC  
1) Derate linearly 28.57 mW/0C for TA >250C  
2) Derate linearly 0.857 W/0C for TC >1000C  
*See Appendix A for  
Package Outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Current  
IC = 10 mAdc  
Symbol  
Min.  
Max.  
Unit  
Vdc  
60  
80  
2N3715  
2N3716  
V(BR)  
CEO  
Collector-Base Cutoff Current  
VCB = 80 Vdc  
VCB = 100 Vdc  
10  
10  
mAdc  
2N3715  
2N3716  
ICBO  
Emitter-Base Breakdown Voltage  
VEB = 7.0 Vdc  
1.0  
mAdc  
mAdc  
IEBO  
ICEX  
Collector-Emitter Cutoff Current  
VBE = 1.5 Vdc, VCE = 60 Vdc  
VBE = 1.5 Vdc, VCE = 80 Vdc  
1.0  
1.0  
2N3715  
2N3716  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

2N3716 替代型号

型号 品牌 替代类型 描述 数据表
2N3716LEADFREE CENTRAL

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Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2
2N3714LEADFREE CENTRAL

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Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2

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