Datasheet > 2N3716

2N3716

更新时间： 2024-11-26 06:23:07

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	42K
描述
isc Silicon NPN Power Transistors

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数据手册

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2N3716 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

2N3715/3716

DESCRIPTION

·DC Current Gain-

: h_FE= 50-150@I_C= 1A

·Wide Area of Safe Operation

·Low Collector Saturation Voltage-

: V_CE(sat)= 0.8V(Max.)@ I_C= 5A

·Complement to Type 2N3791/3792

APPLICATIONS

·Designed for medium-speed switching and amplifier

applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

2N3715

2N3716

2N3715

2N3716

V_CBO

Collector-Base Voltage

100

V_CEO

Collector-Emitter Voltage

V_EBO

I_C

Emitter-Base Voltage

Collector Current-Continuous

Base Current

I_B

P_C

T_J

Collector Power Dissipation@T_C=25℃

Junction Temperature

150

200

-65~200

℃

Storage Temperature

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

1.17

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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