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2N3716 PDF预览

2N3716

更新时间: 2024-11-27 17:00:35
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
18页 654K
描述
80V,10A,150W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

2N3716 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-204AA
包装说明:TO-3, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:1.51
外壳连接:COLLECTOR最大集电极电流 (IC):10 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):30JEDEC-95代码:TO-3
JESD-30 代码:O-MBFM-P2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):150 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzBase Number Matches:1

2N3716 数据手册

 浏览型号2N3716的Datasheet PDF文件第2页浏览型号2N3716的Datasheet PDF文件第3页浏览型号2N3716的Datasheet PDF文件第4页浏览型号2N3716的Datasheet PDF文件第5页浏览型号2N3716的Datasheet PDF文件第6页浏览型号2N3716的Datasheet PDF文件第7页 
2N3713 2N3715  
2N3714 2N3716  
www.centralsemi.com  
SILICON  
NPN TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N3713, 2N3714,  
2N3715, and 2N3716 are silicon NPN power transistors  
manufactured by the epitaxial-base process, mounted  
in a hermetically sealed metal package designed for  
medium speed switching and amplifier applications.  
MARKING: FULL PART NUMBER  
TO-3 CASE  
MAXIMUM RATINGS: (T =25°C)  
2N3713  
2N3715  
80  
2N3714  
2N3716  
100  
C
SYMBOL  
UNITS  
V
Collector-Base Voltage  
V
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
60  
80  
V
V
7.0  
10  
Continuous Collector Current  
Continuous Base Current  
Power Dissipation  
I
A
C
I
4.0  
150  
A
B
P
W
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +200  
1.17  
°C  
°C/W  
J
stg  
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
I
V
V
V
=Rated V  
=Rated V  
=7.0V  
, V =1.5V  
1.0  
mA  
CEV  
CEV  
EBO  
CE  
CE  
EB  
CBO BE  
, V =1.5V, T =150°C  
CEO BE  
10  
mA  
mA  
V
C
5.0  
BV  
I =200mA (2N3713, 2N3715)  
60  
80  
CEO  
CEO  
C
BV  
I =200mA (2N3714, 2N3716)  
V
C
V
V
V
V
V
I =5.0A, I =0.5A (2N3713, 2N3714)  
1.0  
0.8  
2.0  
1.5  
1.5  
120  
150  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
BE(ON)  
FE  
C
B
I =5.0A, I =0.5A (2N3715, 2N3716)  
V
C
B
I =5.0A, I =0.5A (2N3713, 2N3714)  
V
C
B
I =5.0A, I =0.5A (2N3715, 2N3716)  
V
C
B
V
=2.0V, I =3.0A  
V
CE  
CE  
CE  
CE  
CE  
CE  
C
h
h
h
h
V
V
V
V
V
=2.0V, I =1.0A (2N3713, 2N3714)  
40  
50  
15  
30  
4.0  
C
=2.0V, I =1.0A (2N3715, 2N3716)  
FE  
C
=2.0V, I =3.0A (2N3713, 2N3714)  
FE  
C
=2.0V, I =3.0A (2N3715, 2N3716)  
FE  
C
f
t
t
t
=10V, I =0.5A, f=1.0MHz  
MHz  
T
C
I =5.0A, I =I =0.5A  
0.4  
0.3  
0.4  
μs  
r
C
B1 B2  
I =5.0A, I =I =0.5A  
μs  
s
f
C
B1 B2  
I =5.0A, I =I =0.5A  
μs  
C
B1 B2  
R2 (18-June 2013)  

2N3716 替代型号

型号 品牌 替代类型 描述 数据表
JANTX2N3716 MICROSEMI

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