生命周期: | Contact Manufacturer | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.77 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.5 A |
配置: | Single | 最小直流电流增益 (hFE): | 30 |
最高工作温度: | 200 °C | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.8 W | 子类别: | Other Transistors |
表面贴装: | NO | 标称过渡频率 (fT): | 130 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N3120LEADFREE | CENTRAL |
获取价格 |
暂无描述 | |
2N3121 | CENTRAL |
获取价格 |
Small Signal Transistors | |
2N3121LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, | |
2N3122 | CENTRAL |
获取价格 |
Small Signal Transistors | |
2N3133 | CENTRAL |
获取价格 |
Small Signal Transistors | |
2N3133 | RAYTHEON |
获取价格 |
Medium Current General Purpose Amplifiers and Switches | |
2N3133 | NJSEMI |
获取价格 |
PNP SILICON EPITAXIAL TRANSISTORS | |
2N3133LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 35V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PI | |
2N3134 | NJSEMI |
获取价格 |
PNP SILICON EPITAXIAL TRANSISTORS | |
2N3134 | RAYTHEON |
获取价格 |
Medium Current General Purpose Amplifiers and Switches |