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2N2907AUB0SW35 PDF预览

2N2907AUB0SW35

更新时间: 2024-11-29 12:36:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
21页 478K
描述
Hi-Rel 60 V, 0.6 A PNP transistor

2N2907AUB0SW35 数据手册

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2N2907AHR  
Hi-Rel 60 V, 0.6 A PNP transistor  
Datasheet  
-
production data  
Features  
Parameter  
Value  
1
2
3
BVCEO  
60 V  
0.6 A  
> 100  
TO-18  
IC (max)  
3
3
H
FE at 10 V - 150 mA  
4
1
1
2
2
Hermetic packages  
LCC-3  
UB  
ESCC and JANS qualified  
Pin 4 in UB is connected to the metallic lid.  
European preferred part list EPPL  
Figure 1. Internal schematic diagram  
Description  
The 2N2907AHR is a silicon planar PNP  
transistor specifically designed and housed in  
hermetic packages for aerospace and Hi-Rel  
applications. It is available in the JAN qualification  
system (MIL-PRF19500 compliance) and in the  
ESCC qualification system (ESCC 5000  
compliance). In case of discrepancies between  
this datasheet and the relevant agency  
specification, the latter takes precedence.  
Table 1. Device summary  
Qualification  
system  
Device  
Agency specification  
Package  
Radiation level  
EPPL  
JANS2N2907AUBx  
2N2907ARUBx  
2N2907AUB0xSW35  
2N2907AUB0x  
JANS  
ESCC  
ESCC  
ESCC  
ESCC  
ESCC  
ESCC  
ESCC  
ESCC  
ESCC  
MIL-PRF-19500/291  
5202/001  
UB  
UB  
-
-
100 krad ESCC  
100 krad SW  
-
Target  
5202/001  
UB  
-
5202/001  
UB  
Target  
SOC2907ARHRx  
SOC2907ASW35  
SOC2907AHRB  
2N2907ARHRx  
2N2907ASW35  
2N2907AHR  
5202/001  
LCC-3  
LCC-3  
LCC-3  
TO-18  
TO-18  
TO-18  
100 krad ESCC  
100 krad SW  
-
Yes  
5202/001  
-
5202/001  
Yes  
5202/001  
100 krad ESCC  
100 krad SW  
-
-
-
-
5202/001  
5202/001  
September 2013  
DocID15382 Rev 6  
1/21  
This is information on a product in full production.  
www.st.com  
 

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