Datasheet > 2N2907AUBE3-TR

2N2907AUBE3-TR

更新时间： 2024-11-30 05:31:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
6页	100K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-4

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2N2907AUBE3-TR 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

RADIATION HARDENED

PNP SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/291

DEVICES

LEVELS

JANSM – 3K Rads (Si)

JANSD – 10K Rads (Si)

JANSP – 30K Rads (Si)

JANSL – 50K Rads (Si)

JANSR – 100K Rads (Si)

2N2906A

2N2907A

2N2906AL

2N2906AUA

2N2906AUB

2N2907AL

2N2907AUA

2N2907AUB

2N2906AUBC 2N2907AUBC

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

Unit

Collector-Emitter Voltage

V_CEO

V_CBO

V_EBO

I_C

Vdc

mAdc

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current

600

TO-18 (TO-206AA)

2N2906A, 2N2907A

(1)

Total Power Dissipation @ T_A= +25°C

Operating & Storage Junction Temperature Range

P_T

0.5

T_op, T_stg

-65 to +200

°C

THERMAL CHARACTERISTICS

Parameters / Test Conditions

Symbol

Max.

Unit

(1)

Thermal Resistance, Junction-to-Ambient

325

°C/W

R_θJA

4 PIN

1. See MIL-PRF-19500/291 for derating curves.

2N2906AUA, 2N2907AUA

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERISTICS

Symbol

Min.

Max.

Unit

Collector-Emitter Breakdown Voltage

I_C= 10mAdc

V_(BR)CEO

Vdc

Collector-Base Cutoff Current

μAdc

ηAdc

3 PIN

I_CBO

V_CB= 60Vdc

2N2906AUB, 2N2907AUB

2N2906AUBC, 2N2907AUBC

(UBC = Ceramic Lid Version)

V_CB= 50Vdc

Emitter-Base Cutoff Current

V_EB= 5.0Vdc

μAdc

ηAdc

I_EBO

V_EB= 4.0Vdc

Collector-Emitter Cutoff Current

I_CES

ηAdc

V_CE= 50Vdc

T4-LDS-0055 Rev. 4 (100247)

Page 1 of 6

12 3 4 5 6

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