5秒后页面跳转
2N2907AWS-1 PDF预览

2N2907AWS-1

更新时间: 2024-11-29 14:46:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 开关晶体管
页数 文件大小 规格书
2页 44K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon,

2N2907AWS-1 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active包装说明:UNCASED CHIP, X-XUUC-N
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.62Is Samacsys:N
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:X-XUUC-NJESD-609代码:e0
元件数量:1最高工作温度:200 °C
封装主体材料:UNSPECIFIED封装形状:UNSPECIFIED
封装形式:UNCASED CHIP峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):300 ns
最大开启时间(吨):45 nsBase Number Matches:1

2N2907AWS-1 数据手册

 浏览型号2N2907AWS-1的Datasheet PDF文件第2页 
2N2907ADIE  
Phone: 617-924-9280  
Fax: 617-924-1235  
A Microsemi Company  
580 Pleasant St.  
Watertown, MA 02172  
DIE SPECIFICATION  
SWITCHING TRANSISTOR  
PNP SILICON  
FEATURES:  
n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291  
n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS  
n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS  
n LOW VCE(sat): .4V @ IC = 150 mAdc  
PHYSICAL DIMENSIONS  
Absolute Maximum Ratings:  
Symbol Parameter  
Limit  
Unit  
Vceo  
Vcbo  
Vebo  
Ic  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
60  
60  
5.0  
600  
Vdc  
Vdc  
Vdc  
mAdc  
Collector Current- Continuous  
Tj, Tstg Operating Junction & Storage  
Temperature Range  
-65 to +200 °C  
Packaging Options:  
Processing Options:  
W: Wafer (100% probed) U: Wafer (sample probed)  
Standard: Capable of JANTXV applications (No Suffix)  
Suffix C: Commercial  
D: Chip (Waffle Pack)  
B: Chip (Vial)  
V: Chip (Waffle Pack, 100% visually inspected) X: Other Suffix S: Capable of S-Level equivalent applications  
ORDERING INFORMATION:  
PART #: 2N2907A_ _ - _  
Metallization Options:  
Standard: Al Top  
/ Au Backside (No Dash #)  
/ TiPdAg Backside  
First Suffix Letter: Packaging Option  
Second Suffix Letter: Processing Option  
Dash #: Metallization Option  
Dash 1:  
Al Top  
Sertech reserves the right to make changes to any product design, specification, or other information at any time without  
prior notice.  
Data Sheet, Die, 2N2907A MSW Rev. - 4/14/98  
1
MSC0948.PDF  

与2N2907AWS-1相关器件

型号 品牌 获取价格 描述 数据表
2N2907-BP MCC

获取价格

PNP Switching Transistors
2N2907CSM SEME-LAB

获取价格

Bipolar PNP Device in a Hermetically sealed LCC1
2N2907D ZETEX

获取价格

Transistor
2N2907DWP ZETEX

获取价格

Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, PNP, Silicon, 0.025 X 0.025 INCH
2N2907J.TX.V RAYTHEON

获取价格

Medium Current General Purpose Amplifiers and Switches
2N2909 ETC

获取价格

TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 1A I(C) | TO-46
2N2910 ETC

获取价格

TRANSISTOR | BJT | NPN | 25V V(BR)CEO | TO-77
2N2911 ETC

获取价格

TRANSISTOR | BJT | NPN | 125V V(BR)CEO | 3A I(C) | TO-5
2N2912 ETC

获取价格

TRANSISTOR | BJT | PNP | 5V V(BR)CEO | 25A I(C) | TO-36
2N2913 NJSEMI

获取价格

DUAL NPN LOW LEVEL LOW NOISE DIFFERENTIAL AMPLIFIERS