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2N2907AUBC PDF预览

2N2907AUBC

更新时间: 2024-10-05 07:28:23
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
6页 101K
描述
RADIATION HARDENED

2N2907AUBC 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:SMALL OUTLINE, R-CDSO-N3
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.18最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):50JESD-30 代码:R-CDSO-N3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN LEAD
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):300 ns
最大开启时间(吨):45 nsBase Number Matches:1

2N2907AUBC 数据手册

 浏览型号2N2907AUBC的Datasheet PDF文件第2页浏览型号2N2907AUBC的Datasheet PDF文件第3页浏览型号2N2907AUBC的Datasheet PDF文件第4页浏览型号2N2907AUBC的Datasheet PDF文件第5页浏览型号2N2907AUBC的Datasheet PDF文件第6页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
RADIATION HARDENED  
PNP SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/291  
DEVICES  
LEVELS  
JANSM – 3K Rads (Si)  
JANSD – 10K Rads (Si)  
JANSP – 30K Rads (Si)  
JANSL – 50K Rads (Si)  
JANSR – 100K Rads (Si)  
2N2906A  
2N2907A  
2N2906AL  
2N2906AUA  
2N2906AUB  
2N2907AL  
2N2907AUA  
2N2907AUB  
2N2906AUBC 2N2907AUBC  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
VCEO  
VCBO  
VEBO  
IC  
60  
60  
Vdc  
Vdc  
Vdc  
mAdc  
W
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
Collector Current  
600  
TO-18 (TO-206AA)  
2N2906A, 2N2907A  
(1)  
Total Power Dissipation @ TA = +25°C  
Operating & Storage Junction Temperature Range  
PT  
0.5  
Top, Tstg  
-65 to +200  
°C  
THERMAL CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Max.  
Unit  
(1)  
Thermal Resistance, Junction-to-Ambient  
325  
°C/W  
RθJA  
4 PIN  
1. See MIL-PRF-19500/291 for derating curves.  
2N2906AUA, 2N2907AUA  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERISTICS  
Symbol  
Min.  
Max.  
Unit  
Collector-Emitter Breakdown Voltage  
IC = 10mAdc  
V(BR)CEO  
60  
Vdc  
Collector-Base Cutoff Current  
10  
10  
μAdc  
ηAdc  
3 PIN  
ICBO  
VCB = 60Vdc  
2N2906AUB, 2N2907AUB  
2N2906AUBC, 2N2907AUBC  
(UBC = Ceramic Lid Version)  
VCB = 50Vdc  
Emitter-Base Cutoff Current  
VEB = 5.0Vdc  
10  
50  
μAdc  
ηAdc  
IEBO  
VEB = 4.0Vdc  
Collector-Emitter Cutoff Current  
ICES  
50  
ηAdc  
VCE = 50Vdc  
T4-LDS-0055 Rev. 4 (100247)  
Page 1 of 6  

2N2907AUBC 替代型号

型号 品牌 替代类型 描述 数据表
JANS2N2907AUB MICROSEMI

完全替代

PNP SMALL SIGNAL SILICON TRANSISTOR
JAN2N2907AUB MICROSEMI

完全替代

PNP SMALL SIGNAL SILICON TRANSISTOR

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