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2N2907A PDF预览

2N2907A

更新时间: 2024-11-21 22:49:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
2页 68K
描述
PNP BIPOLAR TRANSISTOR

2N2907A 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:BCY
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5
外壳连接:COLLECTOR最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-206AA
JESD-30 代码:O-MBCY-W3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:Tin/Lead (Sn63Pb37)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):300 ns最大开启时间(吨):45 ns
Base Number Matches:1

2N2907A 数据手册

 浏览型号2N2907A的Datasheet PDF文件第2页 
580 Pleasant St.  
Watertown, MA 02172  
PH: (617) 926-0404  
FAX: (617) 924-1235  
2N2907A  
Features  
60 Volts  
0.6 Amps  
· Meets MIL-S-19500/291  
· Collector-Base Voltage 60V  
· Collector Current: 600 mAdc  
· Fast Switching 345 nS  
PNP  
BIPOLAR  
TRANSISTOR  
Maximum Ratings  
RATING  
SYMBOL  
MAX.  
UNIT  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current--Continuous  
Total Device Dissipation  
@ TA = 25oC  
VCEO  
VCBO  
VEBO  
IC  
-60  
-60  
-5.0  
-600  
Vdc  
Vdc  
Vdc  
mAdc  
PD  
400  
2.28  
mW  
mW/oC  
Derate above 25oC  
Total Device Dissipation  
PD  
@ TC = 25oC  
1.8  
10.3  
Watts  
mW/oC  
Derate above 25oC  
oC/W  
oC/W  
oC  
Thermal Resistance, Junction to Ambient  
438  
97  
RqJA  
Thermal Resistance, Junction to Case  
Operating Temperature Range  
Storage Temperature Range  
RqJC  
TJ  
TS  
-65 to+200  
-65 to+200  
oC  
Mechanical Outline  
Datasheet# MSC0276A 5/19/97  

2N2907A 替代型号

型号 品牌 替代类型 描述 数据表
JANS2N2907A MICROSEMI

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PNP SMALL SIGNAL SILICON TRANSISTOR
JAN2N2907A MICROSEMI

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PNP SMALL SIGNAL SILICON TRANSISTOR
JANTX2N2907A MICROSEMI

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PNP SMALL SIGNAL SILICON TRANSISTOR

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