Datasheet > 2N2907A_09

2N2907A_09

更新时间： 2022-09-16 10:29:45

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描述
SILICON PLANAR EPITAXIAL PNP TRANSISTOR

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数据手册

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2N2907A_09 数据手册

SILICON PLANAR EPITAXIAL

PNP TRANSISTOR

2N2907A

•

Low Power

Hermetic TO-18 Metal package.

Ideally suited for High Speed Switching

and General Purpose Applications

•

Screening Options Available

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Collector – Base Voltage

Collector – Emitter Voltage

Emitter – Base Voltage

-60V

CBO

CEO

EBO

-60V

-5V

Continuous Collector Current

Total Power Dissipation at

-600mA

T = 25°C

400mW

Derate Above 25°C

2.28mW/°C

1.8W

T = 25°C

Total Power Dissipation at

Derate Above 25°C

10.3mW/°C

-65 to +200°C

Junction Temperature Range

Storage Temperature Range

stg

THERMAL PROPERTIES

Symbols

Parameters

Min.

Typ. Max. Units

Thermal Resistance, Junction To Ambient

Thermal Resistance, Junction To Case

437.5

97.2

°C/W

θJA

θJC

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Document Number 3553

Issue 2

Page 1 of 3

Website: http://www.semelab-tt.com

12 3

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