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2N2907A_09 PDF预览

2N2907A_09

更新时间: 2022-09-16 10:29:45
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页数 文件大小 规格书
3页 234K
描述
SILICON PLANAR EPITAXIAL PNP TRANSISTOR

2N2907A_09 数据手册

 浏览型号2N2907A_09的Datasheet PDF文件第1页浏览型号2N2907A_09的Datasheet PDF文件第3页 
SILICON PLANAR EPITAXIAL  
PNP TRANSISTOR  
2N2907A  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)  
A
Symbols  
Parameters  
Test Conditions  
Min. Typ  
Max. Units  
(1)  
Collector-Emitter  
Breakdown Voltage  
Collector-Base  
V
I
I
= -10mA  
= -10µA  
I = 0  
B
-60  
(BR)CEO  
C
C
V
I = 0  
E
V
-60  
-5  
(BR)CBO  
Breakdown Voltage  
Emitter-Base Breakdown  
Voltage  
V
I = -10µA  
I = 0  
C
(BR)EBO  
E
I
V
V
= -30V  
= -50V  
V
= -0.5V  
Collector Cut-Off Current  
-50  
-0.01  
-10  
nA  
µA  
CEX  
CE  
CB  
BE  
I = 0  
E
I
Collector Cut-Off Current  
CBO  
T
= 150°C  
A
I
= -150mA  
= -500mA  
= -150mA  
= -500mA  
= -0.1mA  
= -1.0mA  
= -10mA  
I = -15mA  
B
-0.4  
-1.6  
-1.3  
-2.6  
C
(1)  
Collector-Emitter Saturation  
Voltage  
V
CE(sat)  
I
I
I
I
I
I
I
I
I = -50mA  
B
C
C
C
C
C
C
C
C
V
I = -15mA  
B
-0.6  
(1)  
Base-Emitter Saturation  
Voltage  
V
BE(sat)  
I = -50mA  
B
V
V
V
V
V
= -10V  
= -10V  
= -10V  
= -10V  
= -10V  
75  
100  
100  
100  
50  
CE  
CE  
CE  
CE  
CE  
(1)  
Forward-current transfer  
ratio  
h
FE  
= -150mA  
= -500mA  
300  
DYNAMIC CHARACTERISTICS  
I
= -50mA  
V
= -20V  
C
CE  
f
Transition Frequency  
Output Capacitance  
Input Capacitance  
Turn-On Time  
200  
MHz  
pF  
T
f = 100MHz  
= -10V  
V
I = 0  
E
CB  
f = 1.0MHz  
= -2V  
C
C
t
8
obo  
ibo  
V
I = 0  
C
EB  
f = 1.0MHz  
30  
I
I
I
I
= -150mA  
= -15mA  
V
= -30V  
C
CC  
CC  
45  
on  
B1  
ns  
= -150mA  
V
= -30V  
C
t
Turn-Off Time  
300  
off  
= - I = -15mA  
B2  
B1  
Notes  
(1) Pulse Width 300us, δ ≤ 2%  
Semelab Limited  
Telephone +44 (0) 1455 556565  
Coventry Road, Lutterworth, Leicestershire, LE17 4JB  
Fax +44 (0) 1455 552612  
Document Number 3553  
Issue 2  
Page 2 of 3  
Email: sales@semelab-tt.com  
Website: http://www.semelab-tt.com  

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