Datasheet > 2N2907AC3

2N2907AC3

更新时间： 2024-10-05 07:28:23

品牌	Logo	应用领域
SEME-LAB		晶体晶体管局域网
页数	文件大小	规格书
4页	203K
描述
SILICON PLANAR EPITAXIAL PNP TRANSISTOR

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中文翻译

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数据手册

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2N2907AC3 数据手册

SILICON PLANAR

EPITAXIAL PNP TRANSISTOR

2N2907AC3

•

Low Power, High Speed Saturated Switching

Hermetic Surface Mounted Package.

Ideally suited for High Speed Switching

and General Purpose Applications

•

Screening Options Available

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Collector – Base Voltage

Collector – Emitter Voltage

Emitter – Base Voltage

-60V

CBO

CEO

EBO

-60V

-5V

Continuous Collector Current

Total Power Dissipation at

-600mA

T = 25°C

500mW

Derate Above 37.5°C

3.08mW/°C

-65 to +200°C

Junction Temperature Range

Storage Temperature Range

stg

THERMAL PROPERTIES (Each Device)

Symbols

Parameters

Min.

Typ. Max. Units

Thermal Resistance, Junction To Ambient

325

°C/W

θJA

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Telephone +44 (0) 1455 556565

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com

Document Number 8357

Issue 1

Website: http://www.semelab-tt.com

Page 1 of 4

12 3 4

中文翻译

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