Datasheet > 2N2907ASW35

2N2907ASW35

更新时间： 2022-04-25 03:00:33

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
21页	478K
描述
Hi-Rel 60 V, 0.6 A PNP transistor

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2N2907ASW35 数据手册

2N2907AHR

Hi-Rel 60 V, 0.6 A PNP transistor

Datasheet

production data

Features

Parameter

Value

BV_CEO

60 V

0.6 A

> 100

TO-18

I_C(max)

_FEat 10 V - 150 mA

• Hermetic packages

LCC-3

• ESCC and JANS qualified

Pin 4 in UB is connected to the metallic lid.

• European preferred part list EPPL

Figure 1. Internal schematic diagram

Description

The 2N2907AHR is a silicon planar PNP

transistor specifically designed and housed in

hermetic packages for aerospace and Hi-Rel

applications. It is available in the JAN qualification

system (MIL-PRF19500 compliance) and in the

ESCC qualification system (ESCC 5000

compliance). In case of discrepancies between

this datasheet and the relevant agency

specification, the latter takes precedence.

Table 1. Device summary

Qualification

system

Device

Agency specification

Package

Radiation level

EPPL

JANS2N2907AUBx

2N2907ARUBx

2N2907AUB0xSW35

2N2907AUB0x

JANS

ESCC

MIL-PRF-19500/291

5202/001

100 krad ESCC

100 krad SW

Target

5202/001

Target

SOC2907ARHRx

SOC2907ASW35

SOC2907AHRB

2N2907ARHRx

2N2907ASW35

2N2907AHR

5202/001

LCC-3

TO-18

100 krad ESCC

100 krad SW

Yes

5202/001

Yes

5202/001

100 krad ESCC

100 krad SW

5202/001

September 2013

DocID15382 Rev 6

1/21

This is information on a product in full production.

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