Datasheet > 2N2907A_02

2N2907A_02

更新时间： 2024-11-22 03:56:07

品牌	Logo	应用领域
SEMICOA		晶体晶体管
页数	文件大小	规格书
4页	177K
描述
Silicon PNP Transistor

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数据手册

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2N2907A_02 数据手册

Small Signal General

Purpose Transistor (PNP)

2N2907A

Small Signal General Purpose Transistor (PNP)

Features

• Switching and Linear Application

DC to VHF Amplifier Application

• RoHS Compliant

TO-18

Mechanical Data

Case:

Terminals:

Weight:

TO-18, Metal can package

Solderable per MIL-STD-202, Method 208

0.35 grams

Maximum Ratings (T _Ambient=25ºC unless noted otherwise)

Symbol

VCBO

VCEO

VEBO

Description

Collector-Base Voltage

2N2907A

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

Collector Current Continuous

600

Power Dissipation at TA=25°C

400

mW/° C

Power Dissipation Derate above TA=25°C

Power Dissipation at TC=25°C

2.28

1.8

Power Dissipation Derate above TC=25°C

Operating Junction and Storage Temperature Range

10.3

mW/° C

° C

-65 to +200

TJ, TSTG

TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com

Rev. A/AH 2008-06-27

Page 1 of 4

Tel: (800)-TAITRON (800)-824-8766

Fax: (800)-TAITFA (800)-824-8329

(661)-257-6060

(661)-257-6415

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2N2907AC1	SEME-LAB	获取价格	SILICON PLANAR EPITAXIAL PNP TRANSISTOR
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