Datasheet > 2N2907A

2N2907A

更新时间： 2024-11-22 07:28:23

品牌	Logo	应用领域
安森美 - ONSEMI		晶体开关晶体管
页数	文件大小	规格书
3页	86K
描述
Switching Transistor

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中文翻译

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数据手册

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2N2907A 数据手册

2N2907A

Switching Transistor

PNP Silicon Epitaxial

Features

http://onsemi.com

• MIL−PRF−19500/291Qualified

• Available as JAN, JANTX, and JANTXV

COLLECTOR

• Hermetically Sealed Commercial Product with Option for Military

Temperature Range Screening

MAXIMUM RATINGS

BASE

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

−60

Unit

Vdc

CEO

EMITTER

−60

Vdc

CBO

EBO

−5.0

−600

Vdc

Collector Current − Continuous

mAdc

Total Device Dissipation @ T = 25°C

625

5.0

mW/°C

Derate above 25°C

Total Device Dissipation @ T = 25°C

1.5

mW/°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

−65 to +200

°C

stg

TO−18

CASE 206AA

STYLE 1

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

325

150

Unit

°C/W

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

Device

Package

Shipping

JAN2N2907A

JANTX2N2907A

JANTXV2N2907A

TO−18

Bulk

Publication Order Number:

July, 2011 − Rev. 0

2N2907A/D

12 3

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