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2N2907A PDF预览

2N2907A

更新时间: 2024-11-22 06:17:27
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3页 153K
描述
SILICON PLANAR EPITAXIAL TRANSISTORS

2N2907A 数据手册

 浏览型号2N2907A的Datasheet PDF文件第2页浏览型号2N2907A的Datasheet PDF文件第3页 
PNP 2N2907 – 2N2907A  
NPN 2N2222 – 2N2222A  
SILICON PLANAR EPITAXIAL TRANSISTORS  
The 2N2907 and 2N2907aA are PNP transistors mounted in TO-18 metal package with the collector  
connected to the case .  
They are primarily intended for high speed switching.  
NPN complements are 2N2222 and 2N2222A .  
Compliance to RoHS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
2N2907A  
2N2907  
2N2907A  
2N2907  
-60  
-40  
-60  
-60  
-5  
Collector-Emitter Voltage  
Collector-Base Voltage  
VCEO  
V
VCBO  
V
2N2907A  
Emitter-Base Voltage  
Collector Current  
VEBO  
IC  
V
2N2907  
2N2907A  
2N2907  
2N2907A  
2N2907  
2N2907A  
2N2907  
-5  
-600  
0.4  
mA  
Total Power Dissipation  
Total Power Dissipation  
Junction Temperature  
@ Tamb = 25°  
@ Tcase= 25°  
PD  
PD  
TJ  
Watts  
Watts  
°C  
1.8  
2N2907A  
200  
2N2907  
2N2907A  
2N2907  
Storage Temperature range  
TStg  
-65 to +200  
°C  
(1) Applicable up to IC = 500mA  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
Thermal Resistance, Junction to ambient in  
free air  
2N2907A  
2N2907  
2N2907A  
2N2907  
RthJ-a  
RthJ-c  
350  
K/W  
Thermal Resistance, Junction to case  
146  
K/W  
COMSET SEMICONDUCTORS  
1/3  

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