2N2484UB

更新时间： 2024-11-19 22:23:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体半导体晶体管
页数	文件大小	规格书
19页	115K
描述
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

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2N2484UB 数据手册

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 31 November 2000.

INCH-POUND

MIL-PRF-19500/376E

31 August 2000

SUPERSEDING

MIL-PRF-19500/376D

21 August 1998

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER

TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors.

Four levels of product assurance is provided for each device type as specified in MIL-PRF-19500. Two levels of

product assurance are provided for die.

1.2 Physical dimensions. See figure 1 (similar to T0-18), figures 2 and 3 (surface mount case outlines UA and

UB), and figures 4 and 5 (die).

1.3 Maximum ratings.

Types

P_T

V_CBO

V_EBO

V_CEO

I_C

T_Jand T_STG

R_qJA

R_qJC

T_A= +25°C

V dc

mA dc

°C

°C/W

2N2484

2N2484UA

2N2484UB

500 (1)

650 (2)

500 (1)

-65 to +200

325

210

325

146

160

146

(1) Derate linearly at 3.08 mW/°C above T_A= +37.5°C

(2) Derate linearly at 4.76 mW/°C above T_A= +63.5°C.

1.4 Primary electrical characteristics.

h_fe

C_obo

|h_fe|2

V_CE(sat)(1)

Limits

V_CE= 5 V dc

I_C= 1 mA dc

f = 1 kHz

I_E= 0

V_CB= 5 V dc

100 kHz £ f £ 1 MHz

I_C= 1.0 mA dc

I_B= 0.1 mA dc

I_C= 500 mA dc

V_CE= 5 V dc

f = 30 MHz

V dc

0.3

Min

Max

250

900

2.0

7.0

5.0

(1) Pulsed (see 4.5.1).

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,

Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal

(DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...19

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与2N2484UB相关器件

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2N2484UB1	STMICROELECTRONICS	获取价格	高度可靠的60 V@0.5 A NPN晶体管
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2N2484UBG	STMICROELECTRONICS	获取价格	高度可靠的60 V@0.5 A NPN晶体管
2N2484UBT	STMICROELECTRONICS	获取价格	高度可靠的60 V@0.5 A NPN晶体管
2N249	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 200MA I(C) \| TO-9VAR
2N2490	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 12A I(C) \| TO-36
2N2491	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 12A I(C) \| TO-36
2N2492	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 70V V(BR)CEO \| 12A I(C) \| TO-36
2N2493	NJSEMI	获取价格	GE PNP OWER BJT
2N2497	ETC	获取价格	TRANSISTOR \| JFET \| P-CHANNEL \| TO-5