生命周期: | Obsolete | 包装说明: | POST/STUD MOUNT, O-MUPM-H3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.84 |
配置: | SINGLE | 最大直流栅极触发电流: | 0.15 mA |
JEDEC-95代码: | TO-93 | JESD-30 代码: | O-MUPM-H3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 最大均方根通态电流: | 235.5 A |
重复峰值反向电压: | 300 V | 表面贴装: | NO |
端子形式: | HIGH CURRENT CABLE | 端子位置: | UPPER |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N2507 | MICROSEMI | Silicon Controlled Rectifier, 235.5A I(T)RMS, 400V V(RRM), 1 Element, TO-93 |
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2N2507E3 | MICROSEMI | Silicon Controlled Rectifier, 235.5A I(T)RMS, 400V V(RRM), 1 Element, TO-93 |
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2N2508E3 | MICROSEMI | Silicon Controlled Rectifier, 235.5A I(T)RMS, 500V V(RRM), 1 Element, TO-93 |
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2N2509 | CENTRAL | Small Signal Transistors |
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2N2509A | NJSEMI | LOW LEVEL LOW NOISE NPN SILICON PLANAR TRANSISTORS |
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2N2509LEADFREE | CENTRAL | Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, |
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