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2N2109 PDF预览

2N2109

更新时间: 2024-09-15 20:31:19
品牌 Logo 应用领域
APITECH 晶体管
页数 文件大小 规格书
1页 42K
描述
Power Bipolar Transistor, 30A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin,

2N2109 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.45
最大集电极电流 (IC):30 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-114JESD-30 代码:O-MUPM-D3
元件数量:1端子数量:3
最高工作温度:175 °C封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
极性/信道类型:NPN功耗环境最大值:250 W
最大功率耗散 (Abs):250 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:SOLDER LUG端子位置:UPPER
晶体管元件材料:SILICONVCEsat-Max:1.5 V
Base Number Matches:1

2N2109 数据手册

  

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