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2N2102 PDF预览

2N2102

更新时间: 2024-11-09 12:51:07
品牌 Logo 应用领域
COMSET 开关放大器功率放大器
页数 文件大小 规格书
3页 77K
描述
MEDIUM POWER AMPLIFIER & SWITCH

2N2102 数据手册

 浏览型号2N2102的Datasheet PDF文件第2页浏览型号2N2102的Datasheet PDF文件第3页 
NPN 2N2102  
MEDIUM POWER AMPLIFIER & SWITCH  
The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case.  
They are intended for a wide variety of small-signall and medium power applications  
in military and industrial equipments.  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
VCEO  
VCBO  
VCER  
VEBO  
IC  
Collector-Emitter Voltage (IB = 0)  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (RBE = 10 )  
Emitter-Base Voltage  
65  
120  
80  
7
V
V
V
V
A
Collector Current  
1
T
amb= 25°C  
1
5
PD  
Total Power Dissipation  
W
Tcase= 25°C  
TJ  
TStg  
Junction Temperature  
Storage Temperature range  
-65 to 200  
°C  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
RthJ-c  
Rthj-a  
Thermal Resistance, Junction-case  
thermal resistance from junction to ambient in free air  
35  
175  
°C/ W  
COMSET SEMICONDUCTORS  
1/3  

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