是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.73 | 其他特性: | N-F, I/P POWER-MAX(PEAK)=2000W |
标称衰减: | 40 dB | 特性阻抗: | 50 Ω |
构造: | COAXIAL | 最大输入功率 (CW): | 53.01 dBm |
JESD-609代码: | e4 | 最大工作频率: | 2500 MHz |
最小工作频率: | 最高工作温度: | 125 °C | |
最低工作温度: | -54 °C | 射频/微波设备类型: | FIXED ATTENUATOR |
端子面层: | Gold (Au) | 最大电压驻波比: | 1.25 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N2010 | SSDI |
获取价格 |
Silicon Controlled Rectifier, 1.6A I(T)RMS, 1300mA I(T), 50V V(DRM), 1 Element, TO-5, TO-5 |
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2N2011 | SSDI |
获取价格 |
Silicon Controlled Rectifier, 1.3A I(T)RMS, 1300mA I(T), 100V V(DRM), 100V V(RRM), 1 Eleme |
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2N2012 | SSDI |
获取价格 |
Silicon Controlled Rectifier, 1.3A I(T)RMS, 1300mA I(T), 200V V(DRM), 200V V(RRM), 1 Eleme |
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2N2013 | NJSEMI |
获取价格 |
SCR, V(DRM) = 300 V TO 399.9 V |
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2N2013 | SSDI |
获取价格 |
Silicon Controlled Rectifier, 1.3A I(T)RMS, 1300mA I(T), 300V V(DRM), 300V V(RRM), 1 Eleme |
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2N2014 | SSDI |
获取价格 |
Silicon Controlled Rectifier, 1.3A I(T)RMS, 1300mA I(T), 400V V(DRM), 400V V(RRM), 1 Eleme |
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2N2015 | NJSEMI |
获取价格 |
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A |
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2N2015 | DIGITRON |
获取价格 |
TRANSISTOR,BJT,NPN,50V V(BR)CEO,10A I(C),TO-36 |
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2N2016 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 10A I(C) | TO-36 |
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2N2017 | MICRO-ELECTRONICS |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO |
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