Datasheet > 2N1844

2N1844

更新时间： 2024-10-14 20:37:51

品牌	Logo	应用领域
DIGITRON		/
页数	文件大小	规格书
5页	1288K
描述
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 100; Max TMS Bridge Input Voltage: 10; Max DC Reverse Voltage: 6; Capacitance: 7; Package: TO-48

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2N1844 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.74
Is Samacsys：	N	JESD-609代码：	e0
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	Tin/Lead (Sn/Pb)
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

2N1844 数据手册

2N1842-2N1850A

TR1010-TR9010

High-reliability discrete products

and engineering services since 1977

SILICON CONTROLLED RECTIFIER

FEATURES

•

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Rating

Symbol

I_T(RMS)

I_T(AV)

Value

Unit

RMS on-state current @ T_C= 80°C

Mean on-state current @ T_C= 80°C

Non-repetitive surge peak on-state current @ T_J≤ 125°C

t = 8.3ms

t = 10ms

I_TSM

157

150

I2t for fusing @ T_J≤ 125°C, t = 10ms

I²t

112.5

100

A²s

Critical rate of rise of on-state current

di/dt

A/µs

Operating junction temperature range; non-“A”

Operating junction temperature range; “A”

-40 to +100

-65 to +125

T_J

°C

Storage temperature range; non-“A”

Storage temperature range; “A”

-40 to +125

-65 to +125

T_stg

VOLTAGE RATINGS

T_J= 125°C

2N1842(A) 2N1843(A) 2N1844(A) 2N1845(A) 2N1846(A) 2N1847(A) 2N1848(A) 2N1849(A) 2N1850(A)

V_DRM= V_RRM

100

150

200

250

300

400

500

VOLTAGE RATINGS

T_J= 125°C

V_DRM= V_RRM

TR6010

600

TR7010

700

TR8010

800

TR9010

900

TR1010

1000

TR1110

1100

TR1210

1200

THERMAL RESISTANCE

Thermal resistance

Symbol

R_th(j-c)

Value

Unit

Junction to case for DC

Case to heatsink

°C/W

R_th(c-h)

0.4

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Value

Unit

Characteristic

Symbol

Test conditions

Min

Typ

Max

Gate trigger current

I_GT

V_GT

V_GD

T_J= 25°C

T_J= 125°C

V_D= 12V

V_D= V_DRM

R_L= 33Ω

R_L= 3.3Ω

t_p≥ 20µs

Gate trigger voltage

Peak gate voltage

0.25

Gate

open

Holding current

I_H

T_J= 25°C

I_T= 0.5A

Peak on-state voltage

V_TM

I_DRM

I_RRM

2.2

T_J= 25°C

T_J= 125°C

I_TM= 30A

t_p= 10ms

Maximum off-state current

V_DRMspecified

V_RRMspecified

T_J= 25°C

I_G= 200mA

I_T= 30A

di_G/dt = 2A/µs

Turn on time

t_gt

µs

V_D= V_DRM

Rev. 20200923

12 3 4 5

中文翻译

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与2N1844相关器件

型号	品牌	获取价格	描述	数据表
2N1844A	MOTOROLA	获取价格	Silicon Controlled Rectifier, 16A I(T)RMS, 10000mA I(T), 100V V(DRM), 100V V(RRM), 1 Eleme
2N1844A	DIGITRON	获取价格	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 100; Max TMS Bridge Inp
2N1844B	TI	获取价格	2N1844B
2N1845	POWEREX	获取价格	Silicon Controlled Rectifier, 10000mA I(T), 150V V(DRM)
2N1845A	POWEREX	获取价格	Silicon Controlled Rectifier, 10000mA I(T), 150V V(DRM)
2N1846	POWEREX	获取价格	Silicon Controlled Rectifier, 10000mA I(T), 200V V(DRM)
2N1846	DIGITRON	获取价格	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 200; Max TMS Bridge Inp
2N1846	MOTOROLA	获取价格	Silicon Controlled Rectifier, 16A I(T)RMS, 10000mA I(T), 200V V(DRM), 200V V(RRM), 1 Eleme
2N1846A	STMICROELECTRONICS	获取价格	SILICON CONTROLLED RECTIFIER,200V V(DRM),10A I(T),TO-208AA
2N1846A	POWEREX	获取价格	Silicon Controlled Rectifier, 10000mA I(T), 200V V(DRM)

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