Datasheet > 2N1846AHR

2N1846AHR

更新时间： 2024-01-30 06:39:21

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描述
Silicon Controlled Rectifier

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技术参数
数据手册

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2N1846AHR 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.77
JESD-609代码：	e0	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Tin/Lead (Sn/Pb)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

2N1846AHR 数据手册

2N1842-2N1850A

TR1010-TR9010

High-reliability discrete products

and engineering services since 1977

SILICON CONTROLLED RECTIFIER

FEATURES



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.



Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Rating

Symbol

I_T(RMS)

I_T(AV)

Value

Unit

RMS on-state current @ T_C= 80°C

Mean on-state current @ T_C= 80°C

Non-repetitive surge peak on-state current @ T_J≤ 125°C

t = 8.3ms

t = 10ms

I_TSM

157

150

I²t

di/dt

T_J

112.5

100

A²s

A/µs

°C

≤ 125°C, t = 10ms

I2t for fusing @ T_J

Critical rate of rise of on-state current

Operating junction temperature range

Storage temperature range

-40 to +150

-40 to +125

T_stg

°C

VOLTAGE RATINGS

1844(A)

1846(A)

1848(A)

1849(A)

1850(A)

6010

7010

8010

9010

1010

1110

1210

T_J=

1842(A)

1843(A)

125°C

VOLTS

V_DRM

V_RRM

100

200

300

400

500

600

700

800

900

1000

1100

1200

THERMAL RESISTANCE

Thermal resistance

Symbol

R_th(j-c)

Value

Unit

Junction to case for DC

Case to heatsink

°C/W

R_th(c-h)

0.4

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Value

Unit

Characteristic

Symbol

Test conditions

Min

Typ

Max

Ω

≥ 20µs

Gate trigger current

I_GT

V_GT

V_GD

T_J= 25°C

T_J= 125°C

V_D= 12V

V_D= V_DRM

R_L= 33

R_L= 3.3

t_p

Gate trigger voltage

Peak gate voltage

Ω

0.25

Gate

open

Holding current

I_H

T_J= 25°C

I_T= 0.5A

I_TM= 30A

Peak on-state voltage

V_TM

I_DRM

I_RRM

2.2

T_J= 25°C

T_J= 125°C

t_p= 10ms

Maximum off-state current

V_DRMspecified

V_RRMspecified

T_J= 25°C

I_T= 30A

Turn on time

t_gt

µs

V_D= V_DRM

V_R= 30V

I_G= 200mA

di_G/dt = 2A/µs

V_D= 0.67

V_DRM

T_J= 125°C

I_T= 10A

Turn off time

t_q

100

µs

di_R/dt = 30A/µs

dv/dt = 20V/µs

Gate open

Critical rise of off-state voltage

dv/dt

100

V/µs

T_J= 125°C

Linear slope up to 0.67 V_DRMspecified

Rev. 20150306

12 3 4 5

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