Datasheet > 2N1846

2N1846

更新时间： 2024-02-18 10:34:45

品牌	Logo	应用领域
DIGITRON		栅栅极
页数	文件大小	规格书
5页	1288K
描述
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 200; Max TMS Bridge Input Voltage: 10; Max DC Reverse Voltage: 6; Capacitance: 7; Package: TO-48

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2N1846 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.69
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

2N1846 数据手册

2N1842-2N1850A

TR1010-TR9010

High-reliability discrete products

and engineering services since 1977

SILICON CONTROLLED RECTIFIER

FEATURES

•

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Rating

Symbol

I_T(RMS)

I_T(AV)

Value

Unit

RMS on-state current @ T_C= 80°C

Mean on-state current @ T_C= 80°C

Non-repetitive surge peak on-state current @ T_J≤ 125°C

t = 8.3ms

t = 10ms

I_TSM

157

150

I2t for fusing @ T_J≤ 125°C, t = 10ms

I²t

112.5

100

A²s

Critical rate of rise of on-state current

di/dt

A/µs

Operating junction temperature range; non-“A”

Operating junction temperature range; “A”

-40 to +100

-65 to +125

T_J

°C

Storage temperature range; non-“A”

Storage temperature range; “A”

-40 to +125

-65 to +125

T_stg

VOLTAGE RATINGS

T_J= 125°C

2N1842(A) 2N1843(A) 2N1844(A) 2N1845(A) 2N1846(A) 2N1847(A) 2N1848(A) 2N1849(A) 2N1850(A)

V_DRM= V_RRM

100

150

200

250

300

400

500

VOLTAGE RATINGS

T_J= 125°C

V_DRM= V_RRM

TR6010

600

TR7010

700

TR8010

800

TR9010

900

TR1010

1000

TR1110

1100

TR1210

1200

THERMAL RESISTANCE

Thermal resistance

Symbol

R_th(j-c)

Value

Unit

Junction to case for DC

Case to heatsink

°C/W

R_th(c-h)

0.4

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Value

Unit

Characteristic

Symbol

Test conditions

Min

Typ

Max

Gate trigger current

I_GT

V_GT

V_GD

T_J= 25°C

T_J= 125°C

V_D= 12V

V_D= V_DRM

R_L= 33Ω

R_L= 3.3Ω

t_p≥ 20µs

Gate trigger voltage

Peak gate voltage

0.25

Gate

open

Holding current

I_H

T_J= 25°C

I_T= 0.5A

Peak on-state voltage

V_TM

I_DRM

I_RRM

2.2

T_J= 25°C

T_J= 125°C

I_TM= 30A

t_p= 10ms

Maximum off-state current

V_DRMspecified

V_RRMspecified

T_J= 25°C

I_G= 200mA

I_T= 30A

di_G/dt = 2A/µs

Turn on time

t_gt

µs

V_D= V_DRM

Rev. 20200923

12 3 4 5

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与2N1846相关器件

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2N1846A	STMICROELECTRONICS	SILICON CONTROLLED RECTIFIER,200V V(DRM),10A I(T),TO-208AA	获取价格
2N1846A	POWEREX	Silicon Controlled Rectifier, 10000mA I(T), 200V V(DRM)	获取价格
2N1846A	DIGITRON	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 200; Max TMS Bridge Inp	获取价格
2N1846AHR	DIGITRON	Silicon Controlled Rectifier	获取价格
2N1847A	POWEREX	Silicon Controlled Rectifier, 10000mA I(T), 250V V(DRM)	获取价格
2N1848	STMICROELECTRONICS	SILICON CONTROLLED RECTIFIER,300V V(DRM),10A I(T),TO-208AA	获取价格