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2DB1119S-13 PDF预览

2DB1119S-13

更新时间： 2024-11-29 07:27:59
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管开关
页数 文件大小 规格书
4页 195K
描述
PNP SURFACE MOUNT TRANSISTOR

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中文翻译

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2DB1119S-13 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active包装说明：SMALL OUTLINE, R-PSSO-F3
针数：4Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：15 weeks
风险等级：5.76Is Samacsys：N
外壳连接：COLLECTOR最大集电极电流 (IC)：1 A
集电极-发射极最大电压：25 V配置：SINGLE
最小直流电流增益 (hFE)：40JESD-30 代码：R-PSSO-F3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：PNP
最大功率耗散 (Abs)：1 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：FLAT
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：200 MHzBase Number Matches：1

2DB1119S-13 数据手册

 浏览型号2DB1119S-13的Datasheet PDF文件第2页浏览型号2DB1119S-13的Datasheet PDF文件第3页浏览型号2DB1119S-13的Datasheet PDF文件第4页 
2DB1119S  
PNP SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
•
•
•
•
•
Epitaxial Planar Die Construction  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
SOT89-3L  
Mechanical Data  
TOR  
LLEC  
2,4  
CO  
•
•
Case: SOT89-3L  
Case Material: Molded Plastic, "Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish — Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.072 grams (approximate)  
3 E  
2 C  
1 B  
C 4  
T
•
•
1
ASE  
B
3
•
•
•
EMITTER  
EW  
VI  
OP  
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Value  
-25  
-25  
-5  
Unit  
V
V
V
A
Peak Pulse Current  
-2  
Continuous Collector Current  
-1  
A
IC  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Rθ  
Value  
1
Unit  
W
Power Dissipation (Note 3) @ TA = 25°C  
125  
°C/W  
°C  
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C  
Operating and Storage Temperature Range  
JA  
-55 to +150  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
Symbol  
Min  
Typ  
Max  
Unit  
Conditions  
-25  
-25  
-5  
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
I
I
I
C = -10μA, IE = 0  
C = -1mA, IB = 0  
E = -10μA, IC = 0  
CB = -20V, IE = 0  
EB = -4V, IC = 0  
V
-0.1  
⎯
⎯
μA  
μA  
V
V
Emitter Cut-Off Current  
-0.1  
IEBO  
ON CHARACTERISTICS (Note 4)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
-0.15  
-0.85  
⎯
-0.7  
-1.2  
280  
⎯
V
V
VCE(SAT)  
VBE(SAT)  
⎯
⎯
140  
I
I
C = -500mA, IB = -50mA  
C = -500mA, IB = -50mA  
⎯
⎯
V
V
CE = -2V, IC = -50mA  
CE = -2V, IC = -1A  
DC Current Gain  
hFE  
40  
⎯
SMALL SIGNAL CHARACTERISTICS  
VCE = -10V, IC = -50mA  
f = 100MHz  
Transition Frequency  
200  
12  
MHz  
pF  
fT  
⎯
⎯
⎯
⎯
VCB = -10V, IE = 0,  
f = 1MHz  
Output Capacitance  
Cob  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our  
website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.  
DS31298 Rev. 2 - 2  
1 of 4  
www.diodes.com  
2DB1119S  
© Diodes Incorporated  
1234

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