2DB1184Q
PNP SURFACE MOUNT TRANSISTOR
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Features
Mechanical Data
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Epitaxial Planar Die Construction
Low Collector-Emitter Saturation Voltage
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
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Case: TO252-3L
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
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Ordering Information: See Page 3
Weight: 0.34 grams (approximate)
COLLECTOR
3
4
2
BASE
1
EMITTER
Device Schematic
Top View
Pin Out Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
-60
-50
-5
Unit
V
Collector-Emitter Voltage
V
Emitter-Base Voltage
V
Continuous Collector Current
Peak Pulse Collector Current
-3
A
-4.5
A
ICM
Thermal Characteristics
Characteristic
Power Dissipation @TA = 25°C
Symbol
PD
Value
15
Unit
W
Thermal Resistance, Junction to Case
Power Dissipation @TA = 25°C (Note 3)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
8.3
1.2
104
-55 to +150
°C/W
W
°C/W
°C
RθJC
PD
RθJA
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
Min
Typ
Max
Unit
Test Condition
-60
-50
-5
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1
-1
I
I
I
C = -50μA, IE = 0
C = -1mA, IB = 0
V
E = -50μA, IC = 0
VCB = -40V, IE = 0
VEB = - 4V, IC = 0
⎯
⎯
μA
μA
Emitter Cutoff Current
IEBO
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
-1
V
V
VCE(SAT)
VBE(SAT)
hFE
⎯
⎯
120
⎯
⎯
⎯
IC = -2A, IB = -0.2A
IC = -1.5A, IB = -0.15A
VCE = -3V, IC = -0.5A
-1.2
270
⎯
SMALL SIGNAL CHARACTERISTICS
V
CE = -5V, IC = -0.1A,
Current Gain-Bandwidth Product
Output Capacitance
110
26
MHz
pF
fT
⎯
⎯
⎯
⎯
f = 30MHz
Cobo
VCB = -10V, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum pad size recommended.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
1 of 5
www.diodes.com
August 2009
© Diodes Incorporated
2DB1184Q
Document number: DS31504 Rev. 3 - 2
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