Datasheet > 2DB1184Q

2DB1184Q

更新时间： 2022-09-15 20:23:33

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
5页	171K
描述
PNP SURFACE MOUNT TRANSISTOR

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数据手册

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2DB1184Q 数据手册

2DB1184Q

140

120

Pw = 100µs (mA)

= -5V

f = 30MHz

Pw = 100ms (mA)

Pw = 10ms (mA)

100

Pw = 1ms (mA)

DC (mA)

0.1

= 25°C

Single Non-repetitive Pulse

0.01

10 20 30 40 50 60 70 80 90 100

I_C, COLLECTOR CURRENT (mA)

0.1

100

V_CE, COLLECTOR-EMITTER VOLTAGE (V)

Fig. 8 Safe Operating Area (Note 3)

Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current

D = 0.7

D = 0.5

D = 0.3

0.1

D = 0.1

D = 0.9

D = 0.05

(t) = r(t) * R

θJA

= 110°C/W

D = 0.02

D = 0.01

D = 0.005

0.01

P(pk)

- T = P * R (t)

θJA

Duty Cycle, D = t /t

D = Single Pulse

0.001

0.00001 0.0001

0.001

0.01

0.1

100

1,000

10,000

t₁, PULSE DURATION TIME (s)

Fig. 9 Transient Thermal Response

Ordering Information (Note 5)

Part Number

Case

Packaging

2DB1184Q-13

TO252-3L

2500/Tape & Reel

Notes:

5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

2DB1184Q = Product Type Marking Code

= Manufacturers’ code marking

YYWW = Date Code Marking

YY = Last Digit of Year, (ex: 08 = 2008)

WW = Week Code 01-52

YYWW

2DB1184Q

3 of 5

www.diodes.com

August 2009

2DB1184Q

Document number: DS31504 Rev. 3 - 2

1 234 5

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