Datasheet > 2N7002

2N7002

更新时间： 2024-01-14 06:41:05

品牌	Logo	应用领域
美国国家半导体 - NSC		晶体晶体管开关光电二极管
页数	文件大小	规格书
10页	209K
描述
N-Channel Enhancement Mode Field Effect Transistor

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2N7002 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	Is Samacsys：	N
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2N7002 数据手册

NDS7002A

Electrical Characteristics ^T

25 C unless otherwise noted

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

0V, I

10 mA

60V, V

DSS

125 C

500

100

Gate-Body Leakage, Forward

Gate-Body Leakage, Reverse

20V

GSSF

GSSR

e b

100

20V

ON CHARACTERISTICS*

250 mA

Gate Threshold Voltage

, I

2.1

1.2

2.5

GS(th)

Static Drain-Source

On-Resistance

10V, I

0.5A

DS(ON)

125 C

3.5

50 mA

5V, I

1.7

125 C

2.8

10V, I

Drain-Source On-Voltage

500 mA

50 mA

0.6

DS(ON)

5.0V, I

0.09

2700

320

0.15

On-State Drain Current

10V, V

2 V

500

D(ON)

DS(ON)

Forward Transconductance

2 V , I

DS(ON)

200 mA

DYNAMIC CHARACTERISTICS

0V, f 1.0 MHz

Input Capacitance

25V, V

iss

Output Capacitance

oss

rss

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS*

150X

10V,

Turn-On Time

Turn-Off Time

30V, I

200 mA, V

25X, R

OFF

BODY-DRAIN DIODE RATINGS

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

280

1500

1.2

400 mA

Drain-Source Diode Forward Voltage

THERMAL CHARACTERISTICS

Thermal Resistance, Junction to Ambient

0V, I

0.88

417

C/W

iJA

*Pulse Test: Pulse Width

2.0%.

300 ms, Duty Cycle

1 2 3 456 7 8...10

下载PDF

与2N7002相关器件

型号	品牌	描述	获取价格	数据表
2N7002,215	NXP	2N7002 - 60 V, 300 mA N-channel Trench MOSFET TO-236 3-Pin	获取价格
2N7002/D87Z	TI	115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB	获取价格
2N7002/E8	VISHAY	Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Meta	获取价格
2N7002/L99Z	TI	115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB	获取价格
2N7002/S62Z	TI	115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB	获取价格
2N7002/T3	NXP	TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3,	获取价格