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2N5671 PDF预览

2N5671

更新时间: 2024-02-24 19:31:28
品牌 Logo 应用领域
COMSET 晶体开关晶体管局域网
页数 文件大小 规格书
3页 310K
描述
HIGH CURRENT FAST SWITCHING APPLICATIONS

2N5671 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-3
包装说明:FLANGE MOUNT, O-MBFM-P2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.31外壳连接:COLLECTOR
最大集电极电流 (IC):30 A集电极-发射极最大电压:90 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHz

2N5671 数据手册

 浏览型号2N5671的Datasheet PDF文件第2页浏览型号2N5671的Datasheet PDF文件第3页 
NPN 2N5671 – 2N5672  
HIGH CURRENT FAST SWITCHING APPLICATIONS  
The 2N5671 and 2N5672 are silicon multiepitaxial planer NPN transistors in Jedec TO-3.  
They are especially intended for high current, fast switching industrial applications.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
2N5671  
2N5672  
2N5671  
2N5672  
2N5671  
2N5672  
2N5671  
2N5672  
2N5671  
2N5672  
2N5671  
2N5672  
2N5671  
2N5672  
2N5671  
2N5672  
2N5671  
90  
Collector-Emitter Voltage  
Collector-Base Voltage  
VCEO  
V
120  
120  
150  
VCBO  
VEBO  
VCEX  
V
V
V
Emitter-Base Voltage  
7.0  
Collector-Emitter Voltage  
120  
150  
110  
140  
V
EB = -1.5V, REB = 50 Ω  
Collector-Emitter Voltage  
EB <= 50 Ω  
VCER  
IC  
V
A
R
Collector Current  
30  
Base Current  
IB  
10  
A
Total Device Dissipation  
@ TC = 25°  
PD  
140  
Watts  
Junction Temperature  
Storage Temperature  
TJ  
200  
°C  
°C  
2N5672  
2N5671  
2N5672  
TStg  
-65 to +200  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
2N5671  
2N5672  
Thermal Resistance, Junction to Case  
RthJC  
1.25  
°C/W  
COMSET SEMICONDUCTORS  
1/3  

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