5秒后页面跳转
2N5675 PDF预览

2N5675

更新时间: 2024-01-29 17:46:21
品牌 Logo 应用领域
SEME-LAB /
页数 文件大小 规格书
1页 15K
描述
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package

2N5675 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-MBCY-W3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.8
最大集电极电流 (IC):2 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):50
JEDEC-95代码:TO-205ADJESD-30 代码:O-MBCY-W3
元件数量:1端子数量:3
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

2N5675 数据手册

  
2N5675  
Dimensions in mm (inches).  
Bipolar PNP Device in a  
8.51 (0.34)  
9.40 (0.37)  
Hermetically sealed TO39  
Metal Package.  
7.75 (0.305)  
8.51 (0.335)  
6.10 (0.240)  
6.60 (0.260)  
Bipolar PNP Device.  
VCEO = 100V  
IC = 2A  
0.89  
(0.035)  
max.  
12.70  
(0.500)  
min.  
0.41 (0.016)  
0.53 (0.021)  
dia.  
5.08 (0.200)  
typ.  
2.54  
(0.100)  
All Semelab hermetically sealed products  
can be processed in accordance with the  
requirements of BS, CECC and JAN,  
2
1
3
0.74 (0.029)  
1.14 (0.045)  
JANTX, JANTXV and JANS specifications  
0.71 (0.028)  
0.86 (0.034)  
45°  
TO39 (TO205AD)  
PINOUTS  
1 – Emitter  
2 – Base  
3 – Collector  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
100  
2
Units  
VCEO*  
IC(CONT)  
hFE  
V
A
@ 5/0.5 (VCE / IC)  
50  
150  
-
ft  
50M  
Hz  
W
PD  
1
* Maximum Working Voltage  
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.  
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Generated  
1-Aug-02  
Semelab plc.  
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  

与2N5675相关器件

型号 品牌 描述 获取价格 数据表
2N5676 SEME-LAB Bipolar PNP Device in a Hermetically sealed TO66 Metal Package

获取价格

2N5676 ISC Silicon PNP Power Transistors

获取价格

2N5676 SAVANTIC Silicon PNP Power Transistors

获取价格

2N5677 MICROSEMI Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3

获取价格

2N5678 MICROSEMI Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-63, Metal,

获取价格

2N5678E3 MICROSEMI Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-63, Metal,

获取价格