Datasheet > 28LV011RT4FI-20

28LV011RT4FI-20

更新时间： 2024-11-19 22:10:23

品牌	Logo	应用领域
麦斯威 - MAXWELL		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
19页	305K
描述
3.3V 1 Megabit (128K x 8-Bit) EEPROM

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28LV011RT4FI-20 数据手册

28LV011

3.3V 1 Megabit (128K x 8-Bit)

EEPROM

Hig h Vo lta g e

I/ O0

I/ O7 RDY/ Busy

Ge ne ra to r

RES

I/ O Buffe r a nd

Inp ut La tc h

RES

Co ntro l Lo g ic Tim ing

Y De c o d e r

X De c o d e r

Y Ga ting

28LV011

Ad d re ss

Buffe r a nd

La tc h

Me m o ry Arra y

Da ta La tc h

A16

Logic Diagram

FEATURES:

DESCRIPTION:

• 3.3V low voltage operation 128K x 8 Bit EEPROM

• R^AD-PAK® radiation-hardened against natural space

radiation

Maxwell Technologies’ 28LV011 high density, 3.3V, 1 Megabit

EEPROM microcircuit features a greater than 100 krad (Si)

total dose tolerance, depending upon space mission. The

28LV011 is capable of in-system electrical Byte and Page pro-

grammability. It has a 128-Byte Page Programming function to

make its erase and write operations faster. It also features

Data Polling and a Ready/Busy signal to indicate the comple-

tion of erase and programming operations. In the 28LV011,

hardware data protection is provided with the RES pin, in addi-

tion to noise protection on the WE signal and write inhibit on

power on and off. Meanwhile, software data protection is

implemented using the JEDEC-optional Standard algorithm.

The 28LV011 is designed for high reliability in the most

demanding space applications.

• Total dose hardness:

- > 100 krad (Si), depending upon space mission

• Excellent Single Event Effects:

- SEL > 84 MeV/mg/cm²

- SEU_TH> 37 Mev/mg/cm²(read mode)

- SEU saturated cross section = 3E-6 cm²(read mode)

- SEU_TH= 11.4 Mev/mg/cm²(write mode)

- SEU saturated cross section = 5E-3 cm²(write mode)

with hard errors

• Package:

- 32 Pin R^AD-PAK® flat pack

- 32 Pin R^AD-PAK® DIP

- JEDEC-approved byte-wide pinout

• Address Access Time:

- 200, 250 ns Access times available

• High endurance:

- 10,000 erase/write (in Page Mode), 10-year data

retention

• Page write mode:

Maxwell Technologies' patented R^AD-PAK® packaging technol-

ogy incorporates radiation shielding in the microcircuit pack-

age. It eliminates the need for box shielding while providing

the required radiation shielding for a lifetime in orbit or space

mission. In a GEO orbit, R^AD-PAK® provides greater than 100

krad (Si) radiation dose tolerance. This product is available

with screening up to Class S.

- 1 to 128 bytes

• Automatic programming

- 15 ms automatic page/byte write

• Low power dissipation

- 20 mW/MHz active current (typ.)

- 72 µW standby (maximum)

Note:The recommended form of data protection during power

on/off is to hold the RES pin to V during power up and power

down. This may be accompanied by connecting the RES pin

to the CPU reset line. Failure to provide adequate protection

during power on/off may result in lost or modified data.

05.28.02 Rev 2

All data sheets are subject to change without notice

(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com

12 3 4 5 6 7...19

中文翻译

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与28LV011RT4FI-20相关器件

型号	品牌	获取价格	描述	数据表
28LV011RT4FI-25	MAXWELL	获取价格	3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV011RT4FS-20	MAXWELL	获取价格	3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV011RT4FS-25	MAXWELL	获取价格	3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV64	CATALYST	获取价格	64K-Bit CMOS PARALLEL EEPROM
28LV64A	MICROCHIP	获取价格	64K (8K x 8) Low Voltage CMOS EEPROM
28LV64A_04	MICROCHIP	获取价格	64K (8K x 8) Low Voltage CMOS EEPROM
28LV64A-20/L	MICROCHIP	获取价格	64K (8K x 8) Low Voltage CMOS EEPROM
28LV64A--20/L	MICROCHIP	获取价格	64K (8K x 8) Low Voltage CMOS EEPROM
28LV64A-20/P	MICROCHIP	获取价格	64K (8K x 8) Low Voltage CMOS EEPROM
28LV64A--20/P	MICROCHIP	获取价格	64K (8K x 8) Low Voltage CMOS EEPROM

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