Datasheet > 28LV64A30/L

28LV64A30/L

更新时间： 2024-11-24 13:33:11

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数	文件大小	规格书
10页	132K
描述
8K X 8 EEPROM 3V, 300 ns, PQCC32, PLASTIC, LCC-32

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中文翻译

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技术参数
数据手册

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28LV64A30/L 技术参数

生命周期：	Obsolete	零件包装代码：	QFJ
包装说明：	QCCJ,	针数：	32
Reach Compliance Code：	unknown	风险等级：	5.29
最长访问时间：	300 ns	JESD-30 代码：	R-PQCC-J32
内存密度：	65536 bit	内存集成电路类型：	EEPROM
内存宽度：	8	功能数量：	1
端子数量：	32	字数：	8192 words
字数代码：	8000	工作模式：	ASYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	8KX8	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	QCCJ
封装形状：	RECTANGULAR	封装形式：	CHIP CARRIER
并行/串行：	PARALLEL	编程电压：	3 V
认证状态：	Not Qualified	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	2.7 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子形式：	J BEND
端子位置：	QUAD	Base Number Matches：	1

28LV64A30/L 数据手册

Obsolete Device

28LV64A

64K (8K x 8) Low Voltage CMOS EEPROM

FEATURES

PACKAGE TYPES

• 2.7V to 3.6V Supply

RDY/BSY

A12

• 1

28 Vcc

27 WE

26 NC

25 A8

• Read Access Time—300 ns

• CMOS Technology for Low Power Dissipation

- 8 mA Active

- 50 µA CMOS Standby Current

• Byte Write Time—3 ms

• Data Retention >200 years

• High Endurance - Minimum 100,000 Erase/Write

Cycles

• Automatic Write Operation

- Internal Control Timer

A1 10

A0 11

NC 12

I/O0 13

29 A8

28 A9

24 A9

23 A11

22 OE

21 A10

20 CE

19 I/O7

18 I/O6

17 I/O5

16 I/O4

15 I/O3

27 A11

26 NC

25 OE

24 A10

23 CE

22 I/O7

21 I/O6

I/O0

I/O1

I/O2

V_SS14

Auto-Clear Before Write Operation

• Pin 1 indicator on PLCC on top of package

- On-Chip Address and Data Latches

• Data Polling

• Ready/Busy

• Chip Clear Operation

BLOCK DIAGRAM

I/O0...................I/O7

• Enhanced Data Protection

- VCC Detector

- Pulse Filter

VSS

VCC

Data Protection

Circuitry

Chip Enable/

Output Enable

Control Logic

- Write Inhibit

• Electronic Signature for Device Identification

• Organized 8Kx8 JEDEC Standard Pinout

- 28-pin Dual-In-Line Package

- 32-pin Chip Carrier (Leadless or Plastic)

• Available for Extended Temperature Ranges:

- Commercial: 0°C to +70°C

- Industrial: -40°C to +85°C

Auto Erase/Write

Timing

Data

Poll

Input/Output

Buffers

Rdy/

Busy

Program Voltage

Generation

Y Gating

Decoder

64K bit

Cell Matrix

DESCRIPTION

Decoder

The Microchip Technology Inc. 28LV64A is a CMOS 64K non-vol-

atile electrically Erasable PROM organized as 8K words by 8 bits.

The 28LV64A is accessed like a static RAM for the read or write

cycles without the need of external components. During a “byte

write”, the address and data are latched internally, freeing the

microprocessor address and data bus for other operations. Fol-

lowing the initiation of write cycle, the device will go to a busy state

and automatically clear and write the latched data using an inter-

nal control timer. To determine when the write cycle is complete,

the user has a choice of monitoring the Ready/Busy output or

using Data polling. The Ready/Busy pin is an open drain output,

which allows easy configuration in ‘wired-or’ systems. Alterna-

tively, Data polling allows the user to read the location last written

to when the write operation is complete. CMOS design and pro-

cessing enables this part to be used in systems where reduced

power consumption and reliability are required. A complete family

of packages is offered to provide the utmost flexibility in applica-

tions.

A12

2004 Microchip Technology Inc.

Preliminary

DS21113E-page 1

12 3 4 5 6 7...10

中文翻译

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与28LV64A30/L相关器件

型号	品牌	获取价格	描述	数据表
28LV64A-30/L	MICROCHIP	获取价格	64K (8K x 8) Low Voltage CMOS EEPROM
28LV64A--30/L	MICROCHIP	获取价格	64K (8K x 8) Low Voltage CMOS EEPROM
28LV64A30/P	MICROCHIP	获取价格	8K X 8 EEPROM 3V, 300 ns, PDIP28, PLASTIC, DIP-28
28LV64A-30/P	MICROCHIP	获取价格	64K (8K x 8) Low Voltage CMOS EEPROM
28LV64A--30/P	MICROCHIP	获取价格	64K (8K x 8) Low Voltage CMOS EEPROM
28LV64A30/SO	MICROCHIP	获取价格	8K X 8 EEPROM 3V, 300 ns, PDSO28, PLASTIC, SOIC-28
28LV64A-30/SO	MICROCHIP	获取价格	64K (8K x 8) Low Voltage CMOS EEPROM
28LV64A--30/SO	MICROCHIP	获取价格	64K (8K x 8) Low Voltage CMOS EEPROM
28LV64A30/TS	MICROCHIP	获取价格	8K X 8 EEPROM 3V, 300 ns, PDSO28, 8 X 20 MM, TSOP-28
28LV64A-30/TS	MICROCHIP	获取价格	64K (8K x 8) Low Voltage CMOS EEPROM

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