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28LV011RT4FS-25 PDF预览

28LV011RT4FS-25

更新时间: 2024-11-19 22:10:23
品牌 Logo 应用领域
麦斯威 - MAXWELL 内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
19页 305K
描述
3.3V 1 Megabit (128K x 8-Bit) EEPROM

28LV011RT4FS-25 数据手册

 浏览型号28LV011RT4FS-25的Datasheet PDF文件第2页浏览型号28LV011RT4FS-25的Datasheet PDF文件第3页浏览型号28LV011RT4FS-25的Datasheet PDF文件第4页浏览型号28LV011RT4FS-25的Datasheet PDF文件第5页浏览型号28LV011RT4FS-25的Datasheet PDF文件第6页浏览型号28LV011RT4FS-25的Datasheet PDF文件第7页 
28LV011  
3.3V 1 Megabit (128K x 8-Bit)  
EEPROM  
V
Hig h Vo lta g e  
CC  
I/ O0  
I/ O7 RDY/ Busy  
Ge ne ra to r  
V
SS  
RES  
OE  
I/ O Buffe r a nd  
Inp ut La tc h  
CE  
WE  
RES  
Co ntro l Lo g ic Tim ing  
A0  
A6  
Y De c o d e r  
X De c o d e r  
Y Ga ting  
28LV011  
Ad d re ss  
Buffe r a nd  
La tc h  
Me m o ry Arra y  
Da ta La tc h  
A7  
A16  
Logic Diagram  
FEATURES:  
DESCRIPTION:  
• 3.3V low voltage operation 128K x 8 Bit EEPROM  
• RAD-PAK® radiation-hardened against natural space  
radiation  
Maxwell Technologies’ 28LV011 high density, 3.3V, 1 Megabit  
EEPROM microcircuit features a greater than 100 krad (Si)  
total dose tolerance, depending upon space mission. The  
28LV011 is capable of in-system electrical Byte and Page pro-  
grammability. It has a 128-Byte Page Programming function to  
make its erase and write operations faster. It also features  
Data Polling and a Ready/Busy signal to indicate the comple-  
tion of erase and programming operations. In the 28LV011,  
hardware data protection is provided with the RES pin, in addi-  
tion to noise protection on the WE signal and write inhibit on  
power on and off. Meanwhile, software data protection is  
implemented using the JEDEC-optional Standard algorithm.  
The 28LV011 is designed for high reliability in the most  
demanding space applications.  
Total dose hardness:  
- > 100 krad (Si), depending upon space mission  
• Excellent Single Event Effects:  
- SEL > 84 MeV/mg/cm2  
TH  
- SEUTH > 37 Mev/mg/cm2 (read mode)  
- SEU saturated cross section = 3E-6 cm2 (read mode)  
- SEUTH = 11.4 Mev/mg/cm2 (write mode)  
- SEU saturated cross section = 5E-3 cm2 (write mode)  
with hard errors  
• Package:  
- 32 Pin RAD-PAK® flat pack  
- 32 Pin RAD-PAK® DIP  
- JEDEC-approved byte-wide pinout  
Address Access Time:  
- 200, 250 ns Access times available  
High endurance:  
- 10,000 erase/write (in Page Mode), 10-year data  
retention  
• Page write mode:  
Maxwell Technologies' patented RAD-PAK® packaging technol-  
ogy incorporates radiation shielding in the microcircuit pack-  
age. It eliminates the need for box shielding while providing  
the required radiation shielding for a lifetime in orbit or space  
mission. In a GEO orbit, RAD-PAK® provides greater than 100  
krad (Si) radiation dose tolerance. This product is available  
with screening up to Class S.  
- 1 to 128 bytes  
Automatic programming  
- 15 ms automatic page/byte write  
Low power dissipation  
- 20 mW/MHz active current (typ.)  
- 72 µW standby (maximum)  
Note:The recommended form of data protection during power  
on/off is to hold the RES pin to V during power up and power  
SS  
down. This may be accompanied by connecting the RES pin  
to the CPU reset line. Failure to provide adequate protection  
during power on/off may result in lost or modified data.  
05.28.02 Rev 2  
1
All data sheets are subject to change without notice  
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com  
©2002 Maxwell Technologies  
All rights reserved.  

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