Datasheet > 1SV324_07

1SV324_07

更新时间： 2024-02-19 03:01:17

品牌	Logo	应用领域
东芝 - TOSHIBA		石英晶振温度补偿晶振
页数	文件大小	规格书
3页	176K
描述
TCXO/VCO

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中文翻译

获取价格

数据手册

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1SV324_07 数据手册

1SV324

TOSHIBA Diode Silicon Epitaxial Planar Type

1SV324

TCXO/VCO

Unit: mm

•

High capacitance ratio: C /C

= 4.3 (typ.)

1 V 4 V

Low series resistance: r = 0.4 Ω (typ.)

Useful for small size tuner.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Rating

Unit

125

Junction temperature

°C

Storage temperature range

stg

−55~125

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

TOSHIBA

1-1E1A

Weight: 0.004 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 1 μA

⎯

9.2

⎯

Reverse current

Capacitance

= 10 V

⎯

= 1 V, f = 1 MHz

= 4 V, f = 1 MHz

⎯

49.5

1 V

4 V

Capacitance

⎯

Capacitance ratio

Series resistance

1 V 4 V

⎯

4.3

0.4

⎯

= 4 V, f = 100 MHz

⎯

0.8

Note: Signal level when capacitance is measured: Vsig = 500 mVrms

Marking

2007-11-01

12 3

中文翻译

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