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1SV325(TPH3,F) PDF预览

1SV325(TPH3,F)

更新时间: 2024-02-26 22:54:56
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
3页 117K
描述
VARACTOR DIODE,SINGLE,EMD2

1SV325(TPH3,F) 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.71二极管类型:VARIABLE CAPACITANCE DIODE
最大重复峰值反向电压:10 V子类别:Varactors
表面贴装:YESBase Number Matches:1

1SV325(TPH3,F) 数据手册

 浏览型号1SV325(TPH3,F)的Datasheet PDF文件第2页浏览型号1SV325(TPH3,F)的Datasheet PDF文件第3页 
1SV325  
TOSHIBA Diode Silicon Epitaxial Planar Type  
1SV325  
TCXO/VCO  
Unit: mm  
High capacitance ratio: C /C  
= 4.3 (typ.)  
1 V 4 V  
Low series resistance: r = 0.4 (typ.)  
s
Useful for small size tuner.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Rating  
Unit  
V
10  
125  
V
R
Junction temperature  
T
j
°C  
°C  
Storage temperature range  
T
stg  
55~125  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
TOSHIBA  
1-1G1A  
Weight: 0.0014 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
= 1 μA  
R
10  
44  
9.2  
4
3
V
R
Reverse current  
Capacitance  
I
V
V
V
= 10 V  
nA  
pF  
pF  
Ω
R
R
R
R
C
C
= 1 V, f = 1 MHz  
= 4 V, f = 1 MHz  
49.5  
12  
1 V  
4 V  
Capacitance  
Capacitance ratio  
Series resistance  
C
/C  
1 V 4 V  
4.3  
0.4  
r
s
V
= 4 V, f = 100 MHz  
0.8  
R
Note: Signal level when capacitance is measured: Vsig = 500 mVfms  
Marking  
1
2007-11-01  

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