Datasheet > 1SV325,H3F

1SV325,H3F

更新时间： 2024-02-17 23:01:23

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
3页	136K
描述
DIODE VARACTOR 10V ESC

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中文翻译

获取价格

技术参数
数据手册

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1SV325,H3F 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	1.52
二极管类型：	VARIABLE CAPACITANCE DIODE	Base Number Matches：	1

1SV325,H3F 数据手册

1SV325

TOSHIBA Diode Silicon Epitaxial Planar Type

1SV325

TCXO/VCO

Unit: mm

•

High capacitance ratio: C / C = 4.3 (typ.)

1V 4V

Low series resistance: r = 0.4 Ω (typ.)

Useful for small size tuner.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Rating

Unit

125

Junction temperature

°C

Storage temperature range

stg

−55 to 125

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

TOSHIBA

1-1G1A

Weight: 0.0014 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 1 μA

⎯

9.2

⎯

Reverse current

Capacitance

= 10 V

⎯

= 1 V, f = 1 MHz

= 4 V, f = 1 MHz

⎯

49.5

Capacitance

⎯

Capacitance ratio

Series resistance

/ C

⎯

4.3

0.4

⎯

= 4 V, f = 100 MHz

⎯

0.8

Note: Signal level when capacitance is measured: V = 500 mVfms

sig

Marking

Start of commercial production

1999-03

2014-03-01

12 3

中文翻译

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